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Home / Products / UVC / 

UVC

spectral sensitivity from 225 to 287 nm, peak wavelength 275 nm,
according to DVGW W 294-3:2006 and OENORM M5873 and DIN 19294,
different packagings, sorted by detector areas.

Showing all 22 results

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  • SG01S-C18

    UVC, chip active area = 0.06 mm², TO18 housingSingle Price: 49€
    Product Description
    • UVC
    • 0.06 mm2 detector area
    • TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
    • 10 mW/cm2 irradiation at 275 nm (peak responsivity) results a current of approx. 720 nA
    • SiC chip with PTB reported high radiation hardness
  • SG01S-C18-LED

    UVC photodiode for 275 nm UVC LED measurement, chip active area = 0.06 mm², TO18 housingSingle Price: 49€
    Product Description
    • UVC photodiode for 275 nm UVC LED measurement
    • 0.06 mm2 detector area
    • TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
    • 10 mW/cm2 irradiation at 285 nm (peak responsivity) results a current of approx. 720 nA
    • SiC chip with PTB reported high radiation hardness
  • SG01S-C18D

    UVC, chip active area = 0.06 mm², with diffusor, TO18 housingSingle Price: 64€
    Product Description
    • UVC
    • 0.06 mm2 detector area
    • uses a diffuser to produce a Lambertian response over the aperture
    • TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
    • 10 mW/cm2 irradiation at 275 nm (peak responsivity) results a current of approx. 94 nA
    • SiC chip with PTB reported high radiation hardness
  • SG01S-C18ISO90

    UVC, chip active area = 0.06 mm², TO18 housing, isolatedSingle Price: 55€
    Product Description
    • UVC
    • 0.06 mm2 detector area
    • TO18 hermetically sealed metal housing, two isolated pins, one additional grounded pin
    • 10 mW/cm2 irradiation at 275 nm (peak responsivity) results a current of approx. 720 nA
    • SiC chip with PTB reported high radiation hardness
  • SG01S-C18ISO90D

    UVC, chip active area = 0.06 mm², with diffusor, TO18 housing, isolatedSingle Price: 70€
    Product Description
    • UVC
    • 0.06 mm2 detector area
    • uses a diffuser to produce a Lambertian response over the aperture
    • TO18 hermetically sealed metal housing, two isolated pins, one additional grounded pin
    • 10 mW/cm2 irradiation at 275 nm (peak responsivity) results a current of approx. 94 nA
    • SiC chip with PTB reported high radiation hardness
  • SG01S-C5

    UVC, chip active area = 0.06 mm², TO5 housingSingle Price: 53€
    Product Description
    • UVC
    • 0.06 mm2 detector area
    • TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
    • 10 mW/cm2 irradiation at 275 nm (peak responsivity) results a current of approx. 720 nA
    • SiC chip with PTB reported high radiation hardness
  • SG01M-C18

    UVC, chip active area = 0.20 mm², TO18 housingSingle Price: 73€
    Product Description
    • UVC
    • 0.20 mm2 detector area
    • TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
    • 10 mW/cm2 irradiation at 275 nm (peak responsivity) results a current of approx. 2400 nA
    • SiC chip with PTB reported high radiation hardness
  • SG01M-C18ISO90

    UVC, chip active area = 0.20 mm², TO18 housing, isolatedSingle Price: 79€
    Product Description
    • UVC
    • 0.20 mm2 detector area
    • TO18 hermetically sealed metal housing, two isolated pins, one additional grounded pin
    • 10 mW/cm2 irradiation at 275 nm (peak responsivity) results a current of approx. 2400 nA
    • SiC chip with PTB reported high radiation hardness
  • SG01M-C5

    UVC, chip active area = 0.20 mm², TO5 housingSingle Price: 77€
    Product Description
    • UVC
    • 0.20 mm2 detector area
    • TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
    • 10 mW/cm2 irradiation at 275 nm (peak responsivity) results a current of approx. 2.4 µA
    • SiC chip with PTB reported high radiation hardness
  • SG01M-C5ISO90

    UVC, chip active area = 0.20 mm², TO5 housing, isolatedSingle Price: 79€
    Product Description
    • UVC
    • 0.20 mm2 detector area
    • TO5 hermetically sealed metal housing, two isolated pins, one additional grounded pin
    • 10 mW/cm2 irradiation at 275 nm (peak responsivity) results a current of approx. 2400 nA
    • SiC chip with PTB reported high radiation hardness
  • SG01M-C5D

    UVC, chip active area = 0.20 mm², with diffusor, TO5 housingSingle Price: 92€
    Product Description
    • UVC
    • 0.20 mm2 detector area
    • uses a diffuser to produce a Lambertian response over the aperture
    • TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
    • 10 mW/cm2 irradiation at 275 nm (peak responsivity) results a current of approx. 314 nA
    • SiC chip with PTB reported high radiation hardness
  • SG01D-C18

    UVC, chip active area = 0.50 mm², TO18 housingSingle Price: 73€
    Product Description
    • UVC
    • 0.50 mm2 detector area
    • TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
    • 10 µW/cm2 irradiation at 275 nm (peak responsivity) results a current of approx. 6 nA
    • SiC chip with PTB reported high radiation hardness
  • SG01D-C18ISO90

    UVC, chip active area = 0.50 mm², TO18 housing, isolatedSingle Price: 79€
    Product Description
    • UVC
    • 0.50 mm2 detector area
    • TO18 hermetically sealed metal housing, two isolated pins, one additional grounded pin
    • 10 µW/cm2 irradiation at 275 nm (peak responsivity) results a current of approx. 6 nA
    • SiC chip with PTB reported high radiation hardness
  • SG01D-C18D

    UVC, chip active area = 0.5 mm², with diffusor, TO18 housingSingle Price: 88€
    Product Description
    • UVC
    • 0.5 mm2 detector area
    • uses a diffuser to produce a Lambertian response over the aperture
    • TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
    • 10 µW/cm2 irradiation at 275 nm (peak responsivity) results a current of approx. 0.8 nA
    • SiC chip with PTB reported high radiation hardness
  • SG01D-C5ISO90

    UVC, chip active area = 0.50 mm², TO5 housing, isolatedSingle Price: 79€
    Product Description
    • UVC
    • 0.50 mm2 detector area
    • TO5 hermetically sealed metal housing, two isolated pins, one additional grounded pin
    • 10 µW/cm2 irradiation at 275 nm (peak responsivity) results a current of approx. 6 nA
    • SiC chip with PTB reported high radiation hardness
  • SG01D-C5Lens

    UVC, chip active area = 0.50 mm², TO5 lens capSingle Price: 91€
    Product Description
    • UVC
    • 0.50 mm² detector area
    • TO5 hermetically sealed metal housing with concentrating lens
    • 10 µW/cm² irradiation at 275 nm (peak responsivity) results a current of approx. 150 nA
    • 1 isolated pin and 1 case pin
    • SiC chip with PTB reported high radiation hardness
  • SG01D-C5D

    UVC, chip active area = 0.50 mm², with diffusor, TO5 housingSingle Price: 92€
    Product Description
    • UVC
    • 0.50 mm2 detector area
    • uses a diffuser to produce a Lambertian response over the aperture
    • TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
    • 10 µW/cm2 irradiation at 275 nm (peak responsivity) results a current of approx. 0.8 nA
    • SiC chip with PTB reported high radiation hardness
  • SG01L-C18

    UVC, chip active area = 1.00 mm², TO18 housingSingle Price: 133€
    Product Description
    • UVC
    • 1.00 mm2 detector area
    • TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
    • 10 µW/cm2 irradiation at 275 nm (peak responsivity) results a current of approx. 12 nA
    • SiC chip with PTB reported high radiation hardness
  • SG01L-C5

    UVC, chip active area = 1.00 mm², TO5 housingSingle Price: 133€
    Product Description
    • UVC
    • 1.00 mm2 detector area
    • TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
    • 10 µW/cm2 irradiation at 275 nm (peak responsivity) results a current of approx. 12 nA
    • SiC chip with PTB reported high radiation hardness
  • SG01L-C5D

    UVC, chip active area = 1.00 mm², with diffusor, TO5 housingSingle Price: 148€
    Product Description
    • UVC
    • 1.00 mm2 detector area
    • uses a diffuser to produce a Lambertian response over the aperture
    • TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
    • 10 µW/cm2 irradiation at 275 nm (peak responsivity) results a current of approx. 1.6 nA
    • SiC chip with PTB reported high radiation hardness
  • SG01F-C5

    UVC, chip active area = 1.82 mm², TO5 housingSingle Price: 156€
    Product Description
    • UVC
    • 1.82 mm2 detector area
    • TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
    • 1 µW/cm2 irradiation at 275 nm (peak responsivity) results a current of approx. 2.2 nA
    • SiC chip with PTB reported high radiation hardness
  • SG01XL-C5

    UVC, chip active area = 7.60 mm², TO5 housingSingle Price: 428€
    Product Description
    • UVC

    • 7.60 mm2 detector area
    • TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
    • 10 µW/cm2 irradiation at 275 nm (peak responsivity) results a current of approx. 91 nA
    • SiC chip with PTB reported high radiation hardness

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We gladly advise you on this product

Romana Sonnenberg
Dipl.-Ing.

+49 (0) 30 53015211
Gabriel Hopfenmüller
Dipl.-Ing.

+49 (0) 30 53015211
Tilman Weiss
Dr.-Ing.

+49 (0) 30 53015211
Niklas Papathanasiou
Dr. rer. nat.

+49 (0) 30 53015211

Accessories

  • VOLTCON

    Transducer photocurrent-to-voltage 0 - 5 V, four different measurement ranges available: 500 pA, 50 nA, 5 µA and 500 µATransducer photocurrent-to-voltage 0 - 5 VSingle Price: 59€Product Description

    • transducer photocurrent-to-voltage 0 – 5 V
    • maximum photocurrent: 500 µA, 5 µA, 50 nA or 500 pA
  • AMPCON

    Transducer photocurrent-to-current 4 – 20 mA, three different measurement ranges available: 25 nA, 2.5 µA and 250 µATransducer (current amplifier) with output current 4 to 20 mASingle Price: 59€Product Description

    • transmitter (current amplifier) with output current 4 to 20 mA
    • to include photodiodes into an industrial 4 to 20 mA data bus
    • maximum photocurrent: 250 µA, 2.5 µA or 25 nA
  • Multiboard (TW-MF2CAB)

    Two-channel photocurrent-to-voltage transducer 0 – 4 V, jumper selectable measurement ranges from 400 nA to 40 µA. Best suited for experiments where the photocurrent to be measured is yet unknown. Universal dual channel photodiode transducerSingle Price: 99€Product Description

    • universal dual channel photodiode transducer
    • measuring range from 400 nA range up to 400 µA
    • versatile configuration possible
    • well suited for experimental setups and small series
  • Digiboard

    Transducer for the conversion of a photocurrent to a voltage of 0 - 3 V or a photocurrent to a frequency. The programmable limit switch with hysteresis allows the Digiboard to be used as a simple controller unit. The measurement ranges from 300 nA to 30 µA can be configured by jumpers. A potentiometer allows trimming of the voltage output to a defined value. The frequency output offers a high dynamic range of 6 decades.Versatile dual channel current to voltage converting amplifierSingle Price: 149€Product Description

    • versatile dual channel current to voltage converting amplifier
    • one analog and one frequency output
  • SGCD4

    The SGCD4 is a switchable gain photocurrent digitizer that converts small DC currents (e.g. generated by photodiodes) into digital values transmitted via USB to a computer for displaying and recording. Four different current measurement ranges are user selectable by software. The device is delivered with a PTB traceable current calibration.switchable gain photocurrent digitizer, converts small DC currents into digital values, different current measurement rangesSingle Price: 520€Product Description

    • switchable gain photocurrent digitizer, converting small DC currents (e.g. generated by photodiodes) into digital values transmitted via USB to a computer for displaying and recording
    • four switchable gain levels
    • no specific previous metrological knowledge needed
    • delivered with a PTB traceable current calibration
    • low noise cable available on request
  • RADIKON-simple

    The Radikon-Simple bases on a VOLTCON or AMPCON and comes with a rugged shielded housing with BNC connector.External amplifier box to convert the photocurrentSingle Price: 155€Product Description

    • external amplifier box to convert the photocurrent of photodiodes or the sglux UV-Cure-HT sensor
    • signal output 0 – 5 V or 4 – 20 mA
  • RADIKON

    The Radikon is a multifunctional transducer with an adjustable limit switch and an isolated input stage. Possible input signals are photocurrents (up to 5 µA), voltages (0 to 10 V) or current loops (4 to 20 mA). To the outside it offers an 0 - 10 V output and a 230 V relay contact.Versatile industry measurement controller for control cabinet integrationSingle Price: 390€Product Description

    • Versatile industry measurement controller for control cabinet integration
    • adjustable setpoints, relay output, condition visualization via multicolor-LED
    • possible inputs – photo current 5 nA – 5 µA, 4 – 20 mA, 0 – 20 mA, 0 – x V (x configurable up to 10)
    • DIN rail mounting
  • SENSOR MONITOR 5.0

    Measuring and control module for monitoring and automation of irradiation processes. The device provides the display of irradiance and dose information for up to two UV sensors as well as three programmable relays for control of multi-stage irradiation processes.Measuring and control module for monitoring and automation of irradiation processesSingle Price: 490€Product Description

    • measuring and control module for monitoring and automation of irradiation processes
    • indication of radiation, dose and status information
    • three programmable relays for automation of single- and multi-level irradiation processes
    • optional with two measuring inputs and USB/RS232 output
  • Photodiode Amplifier Dual

    The Photodiode Amplifier Dual is based on the Multiboard and comes with a rugged shielded housing, well suited for experimental setups.Two-Channel Photocurrent AmplifierSingle Price: 420€Product Description

    • two-channel photocurrent amplifier
    • conversion of photocurrent into a 0 … 5 V output signal
    • maximum photocurrent: 100 pA … 40 µA
    • suited for experimental setups in measurement laboratories
  • Photodiode Amplifier Connect

    The Photodiode Amplifier Dual is based on the Digiboard and comes with a rugged shielded housing, well suited for experimental setups.Photocurrent amplifier with integrated relay outputSingle Price: 450€Product Description

    • photocurrent amplifier with integrated relay output
    • conversion of photocurrent into a 0 … 5 V output signal
    • maximum photocurrent: 100 pA … 40 µA
    • suited for experimental setups in measurement laboratories

FAQ

What is the detector speed?
The detector risetime / falltime is calculated by that formula: tr/f = 2 Pi RC with R = internal resistance of the amplifier and C = capacitance of the photodiode. Example = a typical value of R is 50 Ohm and the C value for a SG01S photodiode is 15 pF. This calculates: with R = internal resistance of the amplifier and C = capacitance of the photodiode tr/f = 2Pi * 50 Ohm * 21 * 10-12 F = 6.59 * 10-9 s = 6.59 ns
What is the saturation of a photodiode?
The saturation current Isat of a photodiode is determined by its open circuit voltage VOC and its serial resistance RS following the formula: Isat = VOC / RS A typical value (SiC photodiode) for VOC is 2.0 V and for RS = 5 Ohm. This calculates: Isat = 2.0 V / 5 Ohm = 0.4 A = 400 mA. The saturation radiant intensity z calculates by the below formula: z = Isat / (S * A) Where S is the radiant sensitivity of a photodiode and A is the active area. A typical value for S is 0.13 A/W and A = 0.06 mm2 (valid for SG01S). This calculates: zsat = 0.4 A / (0.130 A/W * 6 * 10-8 m2 ) = 51.28 MW/m2 = 5.13 kW/cm2
What are typical rise and fall time of different UV photodiodes?

 

Capacitance C

tr = 2Pi
RC
(R = 50 Ohm)

SG01S-18

15 pF

4.7 ns

SG01M-18

50 pF

15.7 ns

SG01L-5

250 pF

78.5 ns

Is your UVC photodiode compliant to DVGW W294 (2006)?
Yes, f1,Z is smaller than 0.25
What is the lowest pressure that the photodiode can withstand?
Our UV photodiodes are hermetically sealed and can be used under vaccum, theoretically down to 0 Pa.
When is a filtered UV photodiode needed?
Our four filtered versions of the UV photodiode lead to a tighter sensitivity range.
What is the power input of a Multiboard?
The current consumption of a Multiboard is between 4 mA and 20 mA, depending on the amount and type of operating voltage (uni / bipolar) as well as the load at the output (multimeter = no load).

Transducers for photodiodes
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