Broadband UV
spectral sensitivity from 221 to 358 nm, peak wavelength 280 nm,
different packagings, sorted by detector areas.
Showing 1–30 of 32 results
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SG01S-18
UVA+UVB+UVC, chip active area = 0.06 mm², TO18 housingProduct Description- UV broadband (UVA+UVB+UVC)
- 0.06 mm² detector area
- TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10 mW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 960 nA
- SiC chip with PTB reported high radiation hardness
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SG01S-18S
UVA+UVB+UVC, chip active area = 0.06 mm², TO18 short capProduct Description- UV broadband (UVA+UVB+UVC)
- 0.06 mm2 detector area
- flat TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10 mW/cm2 irradiation at 280 nm (peak responsivity) results a current of approx. 960 nA
- SiC chip with PTB reported high radiation hardness
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SG01S-18ISO90
UVA+UVB+UVC, chip active area = 0.06 mm², TO18 housing, isolatedProduct Description- UV broadband (UVA+UVB+UVC)
- 0.06 mm² detector area
- TO18 hermetically sealed metal housing, two isolated pins, one additional grounded pin
- 10 mW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 960 nA
- SiC chip with PTB reported high radiation hardness
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SG01S-18D
UVA+UVB+UVC, chip active area = 0.06 mm², with diffusor, TO18 housingProduct Description- UV broadband (UVA+UVB+UVC)
- 0.06 mm² detector area
- uses a diffuser to produce a Lambertian response over the aperture
- TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10 mW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 123 nA
- SiC chip with PTB reported high radiation hardness
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SG01S-5
UVA+UVB+UVC, chip active area = 0.06 mm², TO5 short capProduct Description- UV broadband (UVA+UVB+UVC)
- 0.06 mm² detector area
- flat TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10mW/cm² irradiation at 280nm (peak responsivity) results a current of approx. 960 nA
- SiC chip with PTB reported high radiation hardness
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SG01M-18
UVA+UVB+UVC, chip active area = 0.20 mm², TO18 housingProduct Description- UV broadband (UVA+UVB+UVC)
- 0.20 mm² detector area
- TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10mW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 3200 nA
- SiC chip with PTB reported high radiation hardness
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SG01M-18S
UVA+UVB+UVC, chip active area = 0.20 mm², TO18 short capProduct Description- UV broadband (UVA+UVB+UVC)
- 0.20 mm2 detector area
- flat TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10mW/cm2 irradiation at 280 nm (peak responsivity) results a current of approx. 3200 nA
- SiC chip with PTB reported high radiation hardness
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SG01M-18ISO90
UVA+UVB+UVC, chip active area = 0.20 mm², TO18 housing, isolatedProduct Description- UV broadband (UVA+UVB+UVC)
- 0.20 mm² detector area
- TO18 hermetically sealed metal housing, two isolated pins, one additional grounded pin
- 10 mW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 3200 nA
- SiC chip with PTB reported high radiation hardness
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SG01M6H-18
UVA+UVB+UVC, 6H SiC chip, chip active area = 0.20 mm², TO18 housingProduct Description- UV broadband (UVA+UVB+UVC)
- 6H SiC chip for enhanced UV sensitivity, e.g. UVA LED control
- 0.20 mm² detector area
- TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10mW/cm² irradiation at 290 nm (peak responsivity) results a current of approx. 3200 nA
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SG01M-5
UVA+UVB+UVC, chip active area = 0.20 mm², TO5 short capProduct Description- UV broadband (UVA+UVB+UVC)
- 0.20 mm² detector area
- flat TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10 mW/cm² irradiation at 280nm (peak responsivity) results a current of approx. 3200 nA
- SiC chip with PTB reported high radiation hardness
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SG01M-5Lens
UVA+UVB+UVC, chip active area = 0.20 mm², TO5 lens cap, according to EN298 standard (flame detection, also H2 burners)Product Description- UV broadband (UVA+UVB+UVC)
- 0.20 mm² detector area
- according to EN298 standard (flame detection, also H2 burners)
- TO5 hermetically sealed metal housing with concentrating lens
- 10 µW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 16 nA
- 1 isolated pin and 1 case pin
- SiC chip with PTB reported high radiation hardness
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SG01M6H-5
UVA+UVB+UVC, 6H SiC chip, chip active area = 0.20 mm², TO5 short capProduct Description- UV broadband (UVA+UVB+UVC)
- 6H SiC chip for enhanced UV sensitivity, e.g. UVA LED control
- 0.20 mm² detector area
- short TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10 mW/cm² irradiation at 290 nm (peak responsivity) results a current of approx. 3200 nA
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SG01D-18
UVA+UVB+UVC, chip active area = 0.50 mm², TO18 housingProduct Description- UV broadband (UVA+UVB+UVC)
- 0.50 mm² detector area
- TO18 hermetically sealed metal housing
- 10 µW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 8 nA
- 1 isolated pin and 1 case pin
- SiC chip with PTB reported high radiation hardness
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SG01D-18S
UVA+UVB+UVC, chip active area = 0.50 mm², TO18 short capProduct Description- UV broadband (UVA+UVB+UVC)
- 0.50 mm2 detector area
- flat TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10 µW/cm2 irradiation at 280 nm (peak responsivity) results a current of approx. 8 nA
- SiC chip with PTB reported high radiation hardness
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SG01D-18ISO90
UVA+UVB+UVC, chip active area = 0.50 mm², TO18 housing, isolatedProduct Description- UV broadband (UVA+UVB+UVC)
- 0.50 mm² detector area
- TO18 hermetically sealed metal housing, two isolated pins, one additional grounded pin
- 10 µW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 8 nA
- SiC chip with PTB reported high radiation hardness
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SG01D-18D
UVA+UVB+UVC, chip active area = 0.50 mm², with diffusor, TO18 housingProduct Description- UV broadband (UVA+UVB+UVC)
- 0.50 mm² detector area
- uses a diffuser to produce a Lambertian response over the aperture
- TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10 µW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 1 nA
- SiC chip with PTB reported high radiation hardness
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SG01D-5
UVA+UVB+UVC, chip active area = 0.50 mm², TO5 short capProduct Description- UV broadband (UVA+UVB+UVC)
- 0.50 mm² detector area
- flat TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10µW/cm² irradiation at 280nm (peak responsivity) results a current of approx. 8 nA
- SiC chip with PTB reported high radiation hardness
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SG01D-5Lens
UVA+UVB+UVC, chip active area = 0.50 mm², TO5 lens cap, according to EN298 standard (flame detection, also H2 burners)Product Description- UV broadband (UVA+UVB+UVC)
- 0.50 mm² detector area
- according to EN298 standard (flame detection, also H2 burners)
- TO5 hermetically sealed metal housing with concentrating lens
- 10 µW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 52 nA
- 1 isolated pin and 1 case pin
- SiC chip with PTB reported high radiation hardness
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SG01D-5ISO90
UVA+UVB+UVC, chip active area = 0.50 mm², TO5 short cap, isolatedProduct Description- UV broadband (UVA+UVB+UVC)
- 0.50 mm² detector area
- flat TO5 hermetically sealed metal housing, two isolated pins, one additional grounded pin
- 10 µW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 8 nA
- SiC chip with PTB reported high radiation hardness
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SG01L-18
UVA+UVB+UVC, chip active area = 1.00 mm², TO18 housingProduct Description- UV broadband (UVA+UVB+UVC)
- 1.00 mm² detector area
- TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10 µW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 16 nA
- SiC chip with PTB reported high radiation hardness
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SG01L-18S
UVA+UVB+UVC, chip active area = 1.00 mm², TO18 short capProduct Description- UV broadband (UVA+UVB+UVC)
- 1.00 mm² detector area
- flat TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10 µW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 16 nA
- SiC chip with PTB reported high radiation hardness
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SG01L-18ISO90
UVA+UVB+UVC, chip active area = 1.00 mm², TO18 housing, isolatedProduct Description- UV broadband (UVA+UVB+UVC)
- 1.00 mm² detector area
- TO18 hermetically sealed metal housing, two isolated pins, one additional grounded pin
- 10 µW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 16 nA
- SiC chip with PTB reported high radiation hardness
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SG01L-5
UVA+UVB+UVC, chip active area = 1.00 mm², TO5 short capProduct Description- UV broadband (UVA+UVB+UVC)
- 1.00 mm² detector area
- short TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10 µW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 16 nA
- SiC chip with PTB reported high radiation hardness
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SG01L-5ISO90
UVA+UVB+UVC, chip active area = 1.00 mm², TO5 short cap, isolatedProduct Description- UV broadband (UVA+UVB+UVC)
- 1.00 mm² detector area
- flat TO5 hermetically sealed metal housing, two isolated pins, one additional grounded pin
- 10 µW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 16 nA
- SiC chip with PTB reported high radiation hardness
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SG01L-5Lens
UVA+UVB+UVC, chip active area = 1.00 mm², TO5 lens capProduct Description- UV broadband (UVA+UVB+UVC)
- 1.00 mm² detector area
- according to EN298 standard (flame detection)
- TO5 hermetically sealed metal housing with concentrating lens
- 10 µW/cm² irradiation at 280 nm (peak responsivity) results a current of approx.1700 nA
- 1 isolated pin and 1 case pin
- SiC chip with PTB reported high radiation hardness
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SG01L-SMD
UVA+UVB+UVC, chip active area = 1,00 mm², 3535 SMD ceramic housing with mineral window glass materialProduct Description- UV broadband (UVA+UVB+UVC)
- 1.00 mm² detector area
- 3535 SMD ceramic housing with mineral window glass material)
- 10 µW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 16 nA
- SiC chip with PTB reported high radiation hardness
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SG01F-5
UVA+UVB+UVC, chip active area = 1.82 mm², TO5 short capProduct Description- UV broadband (UVA+UVB+UVC)
- 1.82 mm² detector area
- flat TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 1 µW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 3 nA
- SiC chip with PTB reported high radiation hardness
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SG01F-5ISO90
UVA+UVB+UVC, chip active area = 1.82 mm², TO5 short cap, isolatedProduct Description- UV broadband (UVA+UVB+UVC)
- 1.82 mm² detector area
- particularly suited for flame detection applications
- flat TO5 hermetically sealed metal housing, two isolated pins, one additional grounded pin
- 1 µW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 3 nA
- SiC chip with PTB reported high radiation hardness
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SG01XL-5
UVA+UVB+UVC, chip active area = 7.60 mm², TO5 housingProduct Description- UV broadband (UVA+UVB+UVC)
- 7.60 mm² detector area
- TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10 µW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 122 nA
- SiC chip with PTB reported high radiation hardness
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SG01XL-5ISO90
UVA+UVB+UVC, chip active area = 7.60 mm², TO5 short cap, isolatedProduct Description- UV broadband (UVA+UVB+UVC)
- 7.60 mm² detector area
- flat TO5 hermetically sealed metal housing , two isolated pins, one additional grounded pin
- 10 µW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 122 nA
- SiC chip with PTB reported high radiation hardness
