UVB+UVC
spectral sensitivity from 231 to 309 nm, peak wavelength 280 nm,
different packagings, sorted by detector areas.
Showing all 9 results
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SG01S-BC18
UVB+UVC, chip active area = 0.06 mm², TO18 housingProduct Description- UVB+UVC
- 0.06 mm2 detector area
- TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10 mW/cm2 irradiation at 280 nm (peak responsivity) results a current of approx. 750 nA
- SiC chip with PTB reported high radiation hardness
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SG01M-BC18
UVB+UVC, chip active area = 0.20 mm², TO18 housingProduct Description- UVB+UVC
- 0.20 mm2 detector area
- TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10 mW/cm2 irradiation at 280 nm (peak responsivity) results a current of approx. 2.5 µA
- SiC chip with PTB reported high radiation hardness
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SG01M-BC5
UVB+UVC, chip active area = 0.20 mm², TO5 housingProduct Description- UVB+UVC
- 0.20 mm2 detector area
- TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10 mW/cm2 irradiation at 280 nm (peak responsivity) results a current of approx. 2.5 µA
- SiC chip with PTB reported high radiation hardness
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SG01D-BC18
UVB+UVC, chip active area = 0.50 mm², TO18 housingProduct Description- UVB+UVC
- 0.50 mm2 detector area
- TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10 µW/cm2 irradiation at 280 nm (peak responsivity) results a current of approx. 6.25 nA
- SiC chip with PTB reported high radiation hardness
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SG01D-BC18ISO90
UVB+UVC, chip active area = 0.50 mm², TO18 housing, isolatedProduct Description- UVB+UVC
- 0.50 mm2 detector area
- TO18 hermetically sealed metal housing, two isolated pins, one additional grounded pin
- 10 µW/cm2 irradiation at 280 nm (peak responsivity) results a current of approx. 6.25 nA
- SiC chip with PTB reported high radiation hardness
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SG01D-B5
UVB, chip active area = 0.50 mm², TO5 housingProduct Description- UVB
- 0.50 mm2 detector area
- TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10 µW/cm2 irradiation at 310 nm (peak responsivity) results a current of approx. 1 nA
- SiC chip with PTB reported high radiation hardness
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SG01L-BC18
UVB+UVC, chip active area = 1.00 mm², TO18 housingProduct Description- UVB+UVC
- 1.00 mm2 detector area
- TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10 µW/cm2 irradiation at 280 nm (peak responsivity) results a current of approx. 12.5 nA
- SiC chip with PTB reported high radiation hardness
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SG01L-BC5
UVB+UVC, chip active area = 1.00 mm², TO5 housingProduct Description- UVB+UVC
- 1.00 mm2 detector area
- TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10 µW/cm2 irradiation at 280 nm (peak responsivity) results a current of approx. 12.5 nA
- SiC chip with PTB reported high radiation hardness
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SG01XL-BC5
UVB+UVC, chip active area = 7.60 mm², TO5 housingProduct Description- UVB+UVC
- 7.60 mm2 detector area
- TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10 µW/cm2 irradiation at 280 nm (peak responsivity) results a current of approx. 95 nA
- SiC chip with PTB reported high radiation hardness