UVA
spectral sensitivity from 309 to 367 nm, peak wavelength 331 nm,
different packagings, sorted by detector areas.
Showing all 10 results
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SG01S-A18
UVA, chip active area = 0.06 mm², TO18 housingProduct Description- UVA
- 0.06 mm2 detector area
- TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10 mW/cm2 irradiation at 331 nm (peak responsivity) results a current of approx. 273 nA
- SiC chip with PTB reported high radiation hardness
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SG01S-A5
UVA, chip active area = 0.06 mm², TO5 housingProduct Description- UVA
- 0.06 mm2 detector area
- TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10 mW/cm2 irradiation at 331 nm (peak responsivity) results a current of approx. 273 nA
- SiC chip with PTB reported high radiation hardness
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SG01M-A18
UVA, chip active area = 0.20 mm², TO18 housingProduct Description- UVA
- 0.20 mm2 detector area
- TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10 mW/cm2 irradiation at 331 nm (peak responsivity) results a current of approx. 910 nA
- SiC chip with PTB reported high radiation hardness
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SG01M-A5
UVA, chip active area = 0.20 mm², TO5 housingProduct Description- UVA
- 0.20 mm2 detector area
- TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10 mW/cm2 irradiation at 331 nm (peak responsivity) results a current of approx. 910 nA
- SiC chip with PTB reported high radiation hardness
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SG01D-A18
UVA, chip active area = 0.50 mm², TO18 housingProduct Description- UVA
- 0.50 mm2 detector area
- TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10 µW/cm2 irradiation at 331 nm (peak responsivity) results a current of approx. 2.27 nA
- SiC chip with PTB reported high radiation hardness
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SG01D-A18ISO90
UVA, chip active area = 0.50 mm², TO18 housing, isolatedProduct Description- UVA
- 0.50 mm2 detector area
- TO18 hermetically sealed metal housing, two isolated pins, one additional grounded pin
- 10 µW/cm2 irradiation at 331 nm (peak responsivity) results a current of approx. 2.3 nA
- SiC chip with PTB reported high radiation hardness
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SG01D-A5
UVA, chip active area = 0.50 mm², TO5 housingProduct Description- UVA
- 0.50 mm2 detector area
- TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10 µW/cm2 irradiation at 331 nm (peak responsivity) results a current of approx. 2.3 nA
- SiC chip with PTB reported high radiation hardness
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SG01L-A18
UVA, chip active area = 1.00 mm², TO18 housingProduct Description- UVA
- 1.00 mm2 detector area
- TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10 µW/cm2 irradiation at 331 nm (peak responsivity) results a current of approx. 4.6 nA
- SiC chip with PTB reported high radiation hardness
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SG01L-A5
UVA, chip active area = 1.00 mm², TO5 housingProduct Description- UVA
- 1.00 mm2 detector area
- TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10 µW/cm2 irradiation at 331 nm (peak responsivity) results a current of approx. 4.6 nA
- SiC chip with PTB reported high radiation hardness
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SG01XL-A5
UVA, chip active area = 7.60 mm², TO5 housingProduct Description- UVA
- 7.60 mm2 detector area
- TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10 µW/cm2 irradiation at 331 nm (peak responsivity) results a current of approx. 34 nA
- SiC chip with PTB reported high radiation hardness