UV is our Business

UV Photodiodes

active area from 0.06 mm² to 36 mm² and quadrant photodiodes for position detections
spectral response for broadband UV or filtered for UVA, UVB, UVC or UV-Index
various entrance optics and housings options available (TO or SMD)
our own SiC photodiode chip production since 2009
also available with VUV sensitivity
PTB (German equivalent of NIST or NPL) measured high radiation hardness
350°C high temperature stable photodiodes available
photodiode application guide

All photodiodes are always on stock, no minimum order quantity. They can be ordered via our web shop or with an email addressed to welcome@sglux.de or from DigiKey. Alternatively, we are happy to issue a quotation or you may click on our shop’s QUOTATION function, instead of CHECKOUT.

We also offer the option of finding photodiodes directly for your application using a product finder with parameter filters.

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Showing 61–90 of 90 results

SG01M-5Lens
UVA+UVB+UVC, chip active area = 0.20 mm², TO5 lens cap, according to EN298 standard (flame detection, also H2 burners)Single Price: 71.1€Product Description
- UV broadband (UVA+UVB+UVC)
- 0.20 mm² detector area
- according to EN298 standard (flame detection, also H2 burners)
- TO5 hermetically sealed metal housing with concentrating lens
- 10 µW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 16 nA
- 1 isolated pin and 1 case pin
- SiC chip with PTB reported high radiation hardness
SG01M6H-5
UVA+UVB+UVC, 6H SiC chip, chip active area = 0.20 mm², TO5 short capSingle Price: 56.7€Product Description
- UV broadband (UVA+UVB+UVC)
- 6H SiC chip for enhanced UV sensitivity, e.g. UVA LED control
- 0.20 mm² detector area
- short TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10 mW/cm² irradiation at 290 nm (peak responsivity) results a current of approx. 3200 nA
SG01D-18
UVA+UVB+UVC, chip active area = 0.50 mm², TO18 housingSingle Price: 52.6€Product Description
- UV broadband (UVA+UVB+UVC)
- 0.50 mm² detector area
- TO18 hermetically sealed metal housing
- 10 µW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 8 nA
- 1 isolated pin and 1 case pin
- SiC chip with PTB reported high radiation hardness
SG01D-18S
UVA+UVB+UVC, chip active area = 0.50 mm², TO18 short capSingle Price: 52.6€Product Description
- UV broadband (UVA+UVB+UVC)
- 0.50 mm² detector area
- flat TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10 µW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 8 nA
- SiC chip with PTB reported high radiation hardness
SG01D-18ISO90
UVA+UVB+UVC, chip active area = 0.50 mm², TO18 housing, isolatedSingle Price: 52.6€Product Description
- UV broadband (UVA+UVB+UVC)
- 0.50 mm² detector area
- TO18 hermetically sealed metal housing, two isolated pins, one additional grounded pin
- 10 µW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 8 nA
- SiC chip with PTB reported high radiation hardness
SG01D-18D
UVA+UVB+UVC, chip active area = 0.50 mm², with diffuser, TO18 housingSingle Price: 60.8€Product Description
- UV broadband (UVA+UVB+UVC)
- 0.50 mm² detector area
- uses a diffuser to produce a Lambertian response over the aperture
- TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10 µW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 1 nA
- SiC chip with PTB reported high radiation hardness
GaP photodiode
UV+VIS, chip active area = 0.51 mm², TO5 cap, very low temperature coefficientSingle Price: 71€Product Description
- Broadband UVA+VIS, very low temperature coefficient
- 0.51 mm² detector area
- TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10 µW/cm² peak radiation results a current of approx. 12.5 nA
- GaP chip
- limited availability
SG04-INGAP-365-0.5
UV+VIS, replacement for EPIGAP EPD 365, chip active area = 0.5 mm², TO5 housing, very low temperature coefficientSingle Price: 42.88€Product Description
- UV+VIS, very low temperature coefficient
- Replacement for EPIGAP EPD 365
- 0.5 mm² detector area
- TO5 hermetically sealed metal housing, 1two isolated pins, one additional grounded pin
- 10mW/cm² peak radiation results a current of approx. 6.3 µA
- Indiumgalliumphosphide (InGaP)
SG04-INGAP-440-0.5
UV+VIS, replacement for EPIGAP EPD 440, chip active area = 0.5 mm², TO5 housing, very low temperature coefficientSingle Price: 39.70€Product Description
- UV+VIS, very low temperature coefficient
- Replacement for EPIGAP EPD 440
- 0.5 mm² detector area
- TO5 hermetically sealed metal housing, 1two isolated pins, one additional grounded pin
- 10mW/cm² peak radiation results a current of approx. 8.8 µA
- Indiumgalliumphosphide (InGaP)
SG04-INGAP-550-0.5
UV+VIS, chip active area = 0.5 mm², TO5 housing, very low temperature coefficientSingle Price: 39.70€Product Description
- UV+VIS, very low temperature coefficient
- 0.5 mm² detector area
- TO5 hermetically sealed metal housing, 1two isolated pins, one additional grounded pin
- 10mW/cm² peak radiation results a current of approx. 12.5 µA
- Indiumgalliumphosphide (InGaP)
SG04-INGAP-640-0.5
VIS, chip active area = 0.5 mm², TO5 housing, very low temperature coefficientSingle Price: 39.70€Product Description
- VIS, very low temperature coefficient
- 0.5 mm² detector area
- TO5 hermetically sealed metal housing, 1two isolated pins, one additional grounded pin
- 10mW/cm² peak radiation results a current of approx. 7.6 µA
- Indiumgalliumphosphide (InGaP)
SG04-INGAP-640-5.9
VIS, chip active area = 5.9 mm², TO5 housing, very low temperature coefficientSingle Price: 130.00€Product Description
- VIS, very low temperature coefficient
- 5.9 mm² detector area
- TO5 hermetically sealed metal housing, 1two isolated pins, one additional grounded pin
- 10mW/cm² peak radiation results a current of approx. 90 µA
- Indiumgalliumphosphide (InGaP)
SG01D-5
UVA+UVB+UVC, chip active area = 0.50 mm², TO5 short capSingle Price: 56.7€Product Description
- UV broadband (UVA+UVB+UVC)
- 0.50 mm² detector area
- flat TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10µW/cm² irradiation at 280nm (peak responsivity) results a current of approx. 8 nA
- SiC chip with PTB reported high radiation hardness
SG01D-5Lens
UVA+UVB+UVC, chip active area = 0.50 mm², TO5 lens cap, according to EN298 standard (flame detection, also H2 burners)Single Price: 71.1€Product Description
- UV broadband (UVA+UVB+UVC)
- 0.50 mm² detector area
- according to EN298 standard (flame detection, also H2 burners)
- TO5 hermetically sealed metal housing with concentrating lens
- 10 µW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 52 nA
- 1 isolated pin and 1 case pin
- SiC chip with PTB reported high radiation hardness
SG01D-5ISO90
UVA+UVB+UVC, chip active area = 0.50 mm², TO5 short cap, isolatedSingle Price: 56.7€Product Description
- UV broadband (UVA+UVB+UVC)
- 0.50 mm² detector area
- flat TO5 hermetically sealed metal housing, two isolated pins, one additional grounded pin
- 10 µW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 8 nA
- SiC chip with PTB reported high radiation hardness
SG01L-18
UVA+UVB+UVC, chip active area = 1.00 mm², TO18 housingSingle Price: 110.3€Product Description
- UV broadband (UVA+UVB+UVC)
- 1.00 mm² detector area
- TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10 µW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 16 nA
- SiC chip with PTB reported high radiation hardness
SG01L-18S
UVA+UVB+UVC, chip active area = 1.00 mm², TO18 short capSingle Price: 110.3€Product Description
- UV broadband (UVA+UVB+UVC)
- 1.00 mm² detector area
- flat TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10 µW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 16 nA
- SiC chip with PTB reported high radiation hardness
SG01L-18ISO90
UVA+UVB+UVC, chip active area = 1.00 mm², TO18 housing, isolatedSingle Price: 116.4€Product Description
- UV broadband (UVA+UVB+UVC)
- 1.00 mm² detector area
- TO18 hermetically sealed metal housing, two isolated pins, one additional grounded pin
- 10 µW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 16 nA
- SiC chip with PTB reported high radiation hardness
SG01L-5
UVA+UVB+UVC, chip active area = 1.00 mm², TO5 short capSingle Price: 114.4€Product Description
- UV broadband (UVA+UVB+UVC)
- 1.00 mm² detector area
- short TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10 µW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 16 nA
- SiC chip with PTB reported high radiation hardness
SG01L-5ISO90
UVA+UVB+UVC, chip active area = 1.00 mm², TO5 short cap, isolatedSingle Price: 116.4€Product Description
- UV broadband (UVA+UVB+UVC)
- 1.00 mm² detector area
- flat TO5 hermetically sealed metal housing, two isolated pins, one additional grounded pin
- 10 µW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 16 nA
- SiC chip with PTB reported high radiation hardness
SG01L-5Lens
UVA+UVB+UVC, chip active area = 1.00 mm², TO5 lens capSingle Price: 128.8€Product Description
- UV broadband (UVA+UVB+UVC)
- 1.00 mm² detector area
- according to EN298 standard (flame detection)
- TO5 hermetically sealed metal housing with concentrating lens
- 10 µW/cm² irradiation at 280 nm (peak responsivity) results a current of approx.1700 nA
- 1 isolated pin and 1 case pin
- SiC chip with PTB reported high radiation hardness
SG01L-SMD
UVA+UVB+UVC, chip active area = 1,00 mm², 3535 SMD ceramic housing with mineral window glass materialSingle Price: 110.3€Product Description
- UV broadband (UVA+UVB+UVC)
- 1.00 mm² detector area
- 3535 SMD ceramic housing with mineral window glass material)
- 10 µW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 16 nA
- SiC chip with PTB reported high radiation hardness
SG01-TANDEM-XL
UVA+IR, active area UV chip = 7.60mm², active area InGaAs chip = 7.07mm², TO5 cap, for flame monitoring applications, other models can be produced, e.g. with a smaller SiC chip (1.82mm²) to save costs or with chips arranged next to each other instead of on top of each other. The advantage of this arrangement is a further further cost savings, the disadvantage is increased focusing effort. The IR sensor can be equipped with filters, e.g. to suppress visible radiation on the measured value.Single Price: 211.2€Product Description
- Double-chip photodiodes for simultaneous measurement of UV and IR
- active area UV chip = 7.60mm²
- active area InGaAs chip = 7.07mm²
- TO5 housing hermetically encapsulated with 4 isolated pins
- further models can be produced, e.g. with a smaller SiC chip (1.82mm2) to save costs
- models available with chips arranged next to each other instead of on top of each other
- option of equipping the IR sensor with additional filters, e.g. to suppress visible radiation on the measured value
SG02-APD-D5
UV Avalanche Photodiodes (SiC), maximum gain 10⁵Single Price: 103€Product Description
- SiC based avalanche photodiode (APD)
- broadband UVA+UVB+UVC, PTB reported high chip stability
- active area A = 0.20 mm²
- TO5 hermetically sealed metal housing, two isolated pins, one additional grounded pin
- max. gain is 10⁵
SG01F-5
UVA+UVB+UVC, chip active area = 1.82 mm², TO5 short capSingle Price: 138.1€Product Description
- UV broadband (UVA+UVB+UVC)
- 1.82 mm² detector area
- flat TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 1 µW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 3 nA
- SiC chip with PTB reported high radiation hardness
SG01F-5ISO90
UVA+UVB+UVC, chip active area = 1.82 mm², TO5 short cap, isolatedSingle Price: 138.1€Product Description
- UV broadband (UVA+UVB+UVC)
- 1.82 mm² detector area
- particularly suited for flame detection applications
- flat TO5 hermetically sealed metal housing, two isolated pins, one additional grounded pin
- 1 µW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 3 nA
- SiC chip with PTB reported high radiation hardness
SG01XL-5
UVA+UVB+UVC, chip active area = 7.60 mm², TO5 housingSingle Price: 418.2€Product Description
- UV broadband (UVA+UVB+UVC)
- 7.60 mm² detector area
- TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10 µW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 122 nA
- SiC chip with PTB reported high radiation hardness
SG01XL-5ISO90
UVA+UVB+UVC, chip active area = 7.60 mm², TO5 short cap, isolatedSingle Price: 418.2€Product Description
- UV broadband (UVA+UVB+UVC)
- 7.60 mm² detector area
- flat TO5 hermetically sealed metal housing , two isolated pins, one additional grounded pin
- 10 µW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 122 nA
- SiC chip with PTB reported high radiation hardness
SG01Q-5
UVA+UVB+UVC, quadrant photodiode, chip active area = 4 x 1.4 mm², TO5 short capSingle Price: 599.5€Product Description
- UV broadband (UVA+UVB+UVC) quadrant photodiode
- Active area 4 x 1.4 mm², 30 µm pitch
- Designed for UV laser beam adjustment applications, autocollimators and other UV
  beam position detection applications
- TO5 hermetically sealed metal housing, short cap, common cathode
- 10 µW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 22 nA / pixel
- SiC chip with PTB reported high radiation hardness
SG01XXL-8ISO90
UVA+UVB+UVC, chip active area = 36.00 mm², TO8 short cap, isolatedSingle Price: 3708€Product Description
- UV broadband (UVA+UVB+UVC)
- 36.00 mm² detector area
- flat TO8 hermetically sealed metal housing , two isolated pins, one additional grounded pin
- 10 µW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 576 nA
- SiC chip with PTB reported high radiation hardness

We gladly advise you on this product

Romana Sonnenberg
Dipl.-Ing.

+49 (0) 30 53015211

Tilman Weiss
Dr.-Ing.

+49 (0) 30 53015211

UV Photodiodes FAQ

Why are there photodiodes with different chip active areas?

Summary:
Decreasing irradiance requires increasing chip active area. If the irradiance to be measured is unknown, an L-chip photodiode should be used for prototypes.
Detailed answer:
The active area of the chip determines how many photons can be collected by a photodetector. Semiconductor detectors, such as SiC UV photodiodes, convert photons into an electrical current, the photocurrent I. This photocurrent increases linearly with the irradiance and the active area of the chip. Since the price of the detector increases with the active area, the choice of area is essentially a compromise between cost and photocurrent. If you know the minimum and maximum irradiance you wish to measure with the UV photodiode, the following simplified formula gives a rough estimate of the photocurrent I for a given chip active area AChip. I=Achip *Eλ *1000 where I is the photocurrent in nA, A is the active chip area in mm² (enter values of 0.06 or 0.2 or 0.5 or 1 or 1.82 or 7.6 or 36) and Eλ is the spectral irradiance of the UV light source you like to measure in mW/cm². The minimum current (photodiode output at the lowest irradiance to be measured) should not be less than 500pA. If you do not know Eλ, the L-chip (1.00mm²) type photodiode should be used for a first evaluation step.

When do I need a broadband photodiode and when do I need filtered photodiodes for UVA, UVB, UVC or UV index?

Summary:
For UV measurement, unfiltered broadband SiC is used by default
Detailed answer:
By default, unfiltered broadband SiC is used for UV measurements. If a UV source also emits radiation that must not contribute to the sensor’s signal (e.g. UV medium pressure lamps used for water or air purification that also emit non-germicidal UV radiation), a filtered SiC detector (UVC, UVB+C or UVA only) should be selected.

Which photodiode do I use for 185nm and 172nm?

Summary:
Our SiC-VUV photodiodes are used here.
Detailed answer:
Our standard SiC photodiodes only have a low sensitivity below 220nm. Below approx. 200nm they have they no longer have any sensitivity. For applications where radiation below 220nm needs to be measured, our VUV (“vaccum UV”) photodiodes are used. Typical applications are the destruction (cracking) of organic carbons in fat or in water (TOC) at 185nm or the matting of paints at 172nm. VUV photodiodes are also used to monitor PFAS photolysis.

Do you produce SMD type photodiodes?

Summary:
Yes, but we do not recommend their use.
Detailed answer:
Yes, we manufacture 3535 SMD type photodiodes (ceramic package), but we recommend the use of metal TO photodiodes. The packaging and hermetic sealing of photodiode chips in metal TO housings with a fused glass window is a mature and extremely reliable process that has been in use for more than 50 years. A TO-packaged sglux SiC UV photodiode is usually the most reliable and durable component in a product, even when exposed to very high UV radiation or operated at high temperature levels. However, recent progress in the development of long life UV LEDs, also in the UVC range, allow UV low pressure tubes to be replaced by these LEDs, resulting in a significant potential reduction in product dimensions. The miniaturization of products such as UV transmittance measurement modules or point-of-use LED UVC disinfection modules allows our customers to move into new areas of application. Sometimes our TO-packaged UV photodiodes are considered too bulky. Our SiC SMD photodiode range is designed for these applications. The package consists of a ceramic body with a mineral window glass to make these SMD photodiodes as reliable as possible. However, TO type photodiodes remain the best choice in terms of durability, reliability and price.

You produce photodiodes with 2 pins and with 3 pins. What is the third pin good for?

Summary:
By default, 2-pin photodiodes are used.
Detailed answer:
By default, 2-pin photodiodes are used. One pin is connected to the metal body of the photodiode and to the anode. The other pin is isolated and connected to the cathode. A 3-pin photodiode is characterized by two isolated pins (connected to the anode and cathode) and one pin connected to the metal case. The 3-pin photodiode is used if the photodiode package is in contact with metal components of the customer's product.

What is the response time of a SiC photodiode?

Summary:
The response time is about 190ps (FWHM).
Detailed answer:
At the Helmholtz-Zentrum Berlin, investigations were carried out on pulse excitation with 266 nm fs laser pulses. The response time of the measured SiC photodiodes is determined by a decay constant of 7 ns at 0 V BIAS voltage. At a maximum BIAS voltage of -160 V, this converges in an exponential relationship towards 3.5 ns. The rise time could not be measured precisely with the available setup, but is faster than 80 ps (sigma), i.e. approx. 190 ps (FWHM).

What about the saturation of the photodiodes?

Summary:
An S-chip type photodiode saturates at around 4.2 kW/cm². Such a high irradiance is very unusual.
Detailed answer:
The saturation current Isat of a photodiode is determined by its open circuit voltage VOC and its series resistance RS according to the formula: Isat = VOC / RS A typical value (SiC photodiode) for VOC is 2.0 V and for RS = 5 Ohm. This gives Isat = 2.0 V / 5 Ohm = 0.4 A = 400 mA. The saturation radiant intensity z is calculated using the formula below: z = Isat / (S * A) Where S is the sensitivity of a photodiode and A is the active area. A typical value for S is 0.16 A/W and A = 0.06 mm² (valid for SG01S). This gives: zsat = 0.4 A / (0.160 A/W * 6 * 10-8 m²) = approx. 42 MW/m² = 4.2 kW/cm². Such a high irradiance is very unusual. However, some laser measurement applications can reach such irradiance levels for short periods of time. This may affect the output current of the photodiode. Please contact us for further information.

Is the photodiode waterproof?

Summary:
Yes.
Detailed answer:
Yes, the photodiode is hermetically sealed and, accordingly, water pressure proof. However, the rear side contact pins must not get in contact with water our moisture. This will influence the photodiode’s output current.

Why are SiC photodiodes significantly more expensive than other UV photodiodes?

Summary:
Because SiC UV photodiodes are technically far superior to other UV photodiodes based on Si or AlGaN.
Detailed answer:
Si- or AlGaN-based photodiodes are available at prices of around EUR 1 or lower. The cost of a SiC UV photodiode is significantly higher (from EUR 10). SiC UV photodiodes are used when there must be no problems with radiation hardness (degradation, drift) during operation. This applies to industrial applications, capital goods, and medical technology. SiC UV photodiodes are also used when perfect "visible blindness" or long-term stability at high temperatures or a very low temperature coefficient in the UVC region is required. Other applications (consumer, wearables, gadgets), etc. work well with low cost UV photodiodes.