Indium gallium phosphide (InGaP) and Gallium phosphide (InGaP)
InGaP photodiodes for UV or UV+VIS measurements, wavelength range 240 nm – 670 nm (depending on the model), replacement for the GaP photodiodes EPIGAP EPD 440 and EPD 365 as well as the GaP photodiode (with EPIGAP chip)
The following list shows the products in TO5 packages. All InGaP photodiodes are also available in TO18 packages, except the SG04-INGAP-5.9 photodiode.
Showing all 6 results
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GaP photodiode
UV+VIS, chip active area = 0.51 mm², TO5 cap, very low temperature coefficientProduct Description- Broadband UVA+VIS, very low temperature coefficient
- 0.51 mm² detector area
- TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10 µW/cm² peak radiation results a current of approx. 12.5 nA
- GaP chip
- limited availability
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SG04-INGAP-365-0.5
UV+VIS, replacement for EPIGAP EPD 365, chip active area = 0.5 mm², TO5 housing, very low temperature coefficientProduct Description- UV+VIS, very low temperature coefficient
- Replacement for EPIGAP EPD 365
- 0.5 mm² detector area
- TO5 hermetically sealed metal housing, 1two isolated pins, one additional grounded pin
- 10mW/cm² peak radiation results a current of approx. 6.3 µA
- Indiumgalliumphosphide (InGaP)
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SG04-INGAP-440-0.5
UV+VIS, replacement for EPIGAP EPD 440, chip active area = 0.5 mm², TO5 housing, very low temperature coefficientProduct Description- UV+VIS, very low temperature coefficient
- Replacement for EPIGAP EPD 440
- 0.5 mm² detector area
- TO5 hermetically sealed metal housing, 1two isolated pins, one additional grounded pin
- 10mW/cm² peak radiation results a current of approx. 8.8 µA
- Indiumgalliumphosphide (InGaP)
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SG04-INGAP-550-0.5
UV+VIS, chip active area = 0.5 mm², TO5 housing, very low temperature coefficientProduct Description- UV+VIS, very low temperature coefficient
- 0.5 mm² detector area
- TO5 hermetically sealed metal housing, 1two isolated pins, one additional grounded pin
- 10mW/cm² peak radiation results a current of approx. 12.5 µA
- Indiumgalliumphosphide (InGaP)
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SG04-INGAP-640-0.5
VIS, chip active area = 0.5 mm², TO5 housing, very low temperature coefficientProduct Description- VIS, very low temperature coefficient
- 0.5 mm² detector area
- TO5 hermetically sealed metal housing, 1two isolated pins, one additional grounded pin
- 10mW/cm² peak radiation results a current of approx. 7.6 µA
- Indiumgalliumphosphide (InGaP)
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SG04-INGAP-640-5.9
VIS, chip active area = 5.9 mm², TO5 housing, very low temperature coefficientProduct Description- VIS, very low temperature coefficient
- 5.9 mm² detector area
- TO5 hermetically sealed metal housing, 1two isolated pins, one additional grounded pin
- 10mW/cm² peak radiation results a current of approx. 90 µA
- Indiumgalliumphosphide (InGaP)