Indium gallium phosphide (InGaP) and Gallium phosphide (InGaP)
InGaP photodiodes for UV or UV+VIS measurements, wavelength range 240 nm – 670 nm (depending on the model), replacement for the GaP photodiodes EPIGAP EPD 440 and EPD 365 as well as the GaP photodiode (with EPIGAP chip)
Showing all 6 results
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GaP photodiode
UV+VIS, chip active area = 0.51 mm², TO5 cap, very low temperature coefficientProduct Description- Broadband UVA+VIS, very low temperature coefficient
- 0.51 mm² detector area
- TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
- 10 µW/cm² peak radiation results a current of approx. 12.5 nA
- GaP chip
- limited availability
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SG04-INGAP-365-0.5
UV+VIS, replacement for EPIGAP EPD 365, chip active area = 0.5 mm², TO5 housing, very low temperature coefficientProduct Description- UV+VIS, very low temperature coefficient
- Replacement for EPIGAP EPD 365
- 0.5 mm² detector area
- TO5 hermetically sealed metal housing, 1two isolated pins, one additional grounded pin
- 10mW/cm² peak radiation results a current of approx. 6.3 µA
- Indiumgalliumphosphide (InGaP)
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SG04-INGAP-440-0.5
UV+VIS, replacement for EPIGAP EPD 440, chip active area = 0.5 mm², TO5 housing, very low temperature coefficientProduct Description- UV+VIS, very low temperature coefficient
- Replacement for EPIGAP EPD 440
- 0.5 mm² detector area
- TO5 hermetically sealed metal housing, 1two isolated pins, one additional grounded pin
- 10mW/cm² peak radiation results a current of approx. 8.8 µA
- Indiumgalliumphosphide (InGaP)
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SG04-INGAP-550-0.5
UV+VIS, chip active area = 0.5 mm², TO5 housing, very low temperature coefficientProduct Description- UV+VIS, very low temperature coefficient
- 0.5 mm² detector area
- TO5 hermetically sealed metal housing, 1two isolated pins, one additional grounded pin
- 10mW/cm² peak radiation results a current of approx. 12.5 µA
- Indiumgalliumphosphide (InGaP)
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SG04-INGAP-640-0.5
VIS, chip active area = 0.5 mm², TO5 housing, very low temperature coefficientProduct Description- VIS, very low temperature coefficient
- 0.5 mm² detector area
- TO5 hermetically sealed metal housing, 1two isolated pins, one additional grounded pin
- 10mW/cm² peak radiation results a current of approx. 7.6 µA
- Indiumgalliumphosphide (InGaP)
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SG04-INGAP-640-5.9
VIS, chip active area = 5.9 mm², TO5 housing, very low temperature coefficientProduct Description- VIS, very low temperature coefficient
- 5.9 mm² detector area
- TO5 hermetically sealed metal housing, 1two isolated pins, one additional grounded pin
- 10mW/cm² peak radiation results a current of approx. 90 µA
- Indiumgalliumphosphide (InGaP)
