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Home / Products / UV Photodiodes / Broadband UV / SG01D-5Lens

SG01D-5Lens

  • UV broadband (UVA+UVB+UVC)
  • 0.50 mm² detector area
  • according to EN298 standard (flame detection, also H2 burners)
  • TO5 hermetically sealed metal housing with concentrating lens
  • 10 µW/cm² irradiation at 280 nm (peak responsivity) results a current of approx. 52 nA
  • 1 isolated pin and 1 case pin
  • SiC chip with PTB reported high radiation hardness

Single Price: 69,00€

  • Description
  • CAD
  • Quantity prices for sample orders
  • Publications

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from 1 piece = EUR 69,00 / piece
from 10 pieces = EUR 59,20 / piece
from 50 pieces = EUR 44,70 / piece
from 100 pieces = EUR 36,56 / piece

For higher quantities, please feel free to contact us for a quotation.

Publications

2025 – Flame monitoring in industrial burners with semiconductor-based UV sensors focusing on hydrogen-flame
Dr. Tilman Weiss, sglux GmbH, Berlin, Germany
Yuyu Kimura, IR System Co., Ltd., Tokyo, Japan

This article was first published in the Japanese Journal of Industrial Heating 2025, vol. 62, no. 3, Edition May

Flame monitoring in industrial burners with semiconductor-based UV sensors focusing on hydrogen-flame


Abstract
Using semiconductor based sensors for flame detection, such as presented with this article can be regarded as a fascinating approach not just with regards on costs and safety. Additionally, looking at environmental and sustainability aspects using semiconductor sensors instead of discharge tubes is a useful tool towards durability and longevity. The possibility of working with two different sensor chips for two different kind of irradiadion (UV and IR) in one small size sensor housing opens up a multitude of new and interesting application possibilities.

2024 – Measuring UV radiation without filters – silicon carbide (SiC) photodiodes make it possible
Dr. Niklas Papathanasiou, sglux GmbH, Berlin, Germany

Sensor Magazin 2/2024 (c) Magazin Verlag

Abstract
For more than 20 years, the Berlin-based company sglux GmbH has been producing photodiodes and sensors for measuring UV radiation, as used in many areas of industrial production, medical technology, combustion control and for monitoring UV disinfection processes. The precise detection of the ultraviolet irradiance is of great importance for a controlled and efficient functioning. sglux solves these tasks with SiC-based photodiodes, since 2009 from in-house semiconductor production. SiC photodiodes have an advantage in the detection of UV radiation due to their high band gap of 3.26 eV, as they are insensitive to visible and near-infrared radiation. In addition, SiC photodiodes have very low dark currents, so that even the smallest amounts of radiation can be detected. In the measurement of strong UV radiation, SiC scores with its high resistance to degradation.

2023 – 4H-SiC PIN Photodiode for VUV Detection Using an Enhanced Emitter Doping Design
M. Schraml¹, N. Papathanasiou², A. May¹, M. Rommel¹, T. Erlbacher³
¹Fraunhofer IISB, Erlangen, Germany
²sglux GmbH, Berlin, Germany
³Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen, Germany

2023 IEEE Photonics Conference (IPC) 12. – 16.11.2023

4H-SiC PIN Photodiode for VUV Detection Using an Enhanced Emitter Doping Desig

Abstract
The fabrication of a novel Vacuum UV (VUV) sensitive 4H-SiC pin photodiode is presented. Aluminum ion implantation was used to fabricate a patterned emitter structure with p – and p + regions resulting in the highest reported VUV sensitivity for a SiC pin photodiode.

2023 – Towards Sic-Based VUV Pin-Photodiodes – Investigations on 4H-SiC Photodiodes with Shallow Implanted Al Emitters
Michael Schraml¹, Alexander May¹, Dr. Tobias Erlbacher¹, Dr. Niklas Papathanasiou², Dr. Tilman Weiss²,
¹Fraunhofer IISB, Erlangen, Germany
²sglux GmbH, Berlin, Germany

Towards SiC-Based VUV Pin-Photodiodes – Investigations on 4H-SiC Photodiodes with Shallow Implanted Al Emitters

Zusammenfassung
4H silicon carbide (SiC) based pin photodiodes with a sensitivity in the vacuum ultraviolet spectrum (VUV) demand newly developed emitter doping profiles. This work features the first ever reported 4H-SiC pin photodiodes with an implanted p-emitter and a noticeable sensitivity at a wavelength of 200 nm. As a first step, Aluminum doping profiles produced by low energy ion implantation in 4H-SiC were characterized by secondary-ion mass spectrometry (SIMS). Photodiodes using these shallow emitters are compared to one with a deep p-emitter doping profile employing IV characteristics and the spectral response. SIMS results demonstrate the possibility of shallow Alimplantation profiles using low implantation energies with all emitter profiles featuring characteristic I-V results. For some shallow doping profiles, a meassurable signal at the upper limit of the VUV spectrum could be demonstrated, paving the way towards 4H-SiC pin photodiodes with sensitivities for wavelengths below 200 nm.

2022 – How to determine the right UV sensor for flame detection?
Dr. Tilman Weiss, sglux GmbH, Berlin, Germany

How to determine the right UV sensor for flame detection?

Abstract
The present article informs about different approaches using UV photodetectors for the detection of a combustion flame (natural gas, hydrogen or oil).

TOCONs with reduced dead times used for the detection of fire and combustion burner flames
Further information can be found in our publication:

TOCONs for the detection of fire and combustion burner flames
2021 – How two sglux photodiodes contribute to the NASA 2021 Perseverance mission
Luther W. Beegle et al.
Space Sci Rev (2021) 217:58

Perseverance’s Scanning Habitable Environments with Raman and Luminescence for Organics and Chemicals (SHERLOC) Investigation

Abstract
The Scanning Habitable Environments with Raman and Luminescence for Organics and Chemicals (SHERLOC) is a robotic arm-mounted instrument on NASA’s Perseverance rover. SHERLOC has two primary boresights. The Spectroscopy boresight generates spatially resolved chemical maps using fluorescence and Raman spectroscopy coupled to microscopic images (10.1 μm/pixel). The second boresight is a Wide Angle Topographic Sensor for Operations and eNgineering (WATSON); a copy of the Mars Science Labora- tory (MSL) Mars Hand Lens Imager (MAHLI) that obtains color images from microscopic scales (∼13 μm/pixel) to infinity. SHERLOC Spectroscopy focuses a 40 μs pulsed deep UV neon-copper laser (248.6 nm), to a ∼100 μm spot on a target at a working distance of ∼48 mm. Fluorescence emissions from organics, and Raman scattered photons from organics and minerals, are spectrally resolved with a single diffractive grating spectrograph with a spectral range of 250 to ∼370 nm. Because the fluorescence and Raman regions are natu- rally separated with deep UV excitation (<250 nm), the Raman region ∼ 800 – 4000 cm−1 (250 to 273 nm) and the fluorescence region (274 to ∼370 nm) are acquired simultaneously without time gating or additional mechanisms. SHERLOC science begins by using an Aut- ofocus Context Imager (ACI) to obtain target focus and acquire 10.1 μm/pixel greyscale images. Chemical maps of organic and mineral signatures are acquired by the orchestration of an internal scanning mirror that moves the focused laser spot across discrete points on the target surface where spectra are captured on the spectrometer detector. ACI images and chemical maps (< 100 μm/mapping pixel) will enable the first Mars in situ view of the spa- tial distribution and interaction between organics, minerals, and chemicals important to the assessment of potential biogenicity (containing CHNOPS). Single robotic arm placement chemical maps can cover areas up to 7×7 mm in area and, with the < 10 min acquisition time per map, larger mosaics are possible with arm movements. This microscopic view of the organic geochemistry of a target at the Perseverance field site, when combined with the other instruments, such as Mastcam-Z, PIXL, and SuperCam, will enable unprecedented analysis of geological materials for both scientific research and determination of which sam- ples to collect and cache for Mars sample return.

2021 – Sensing ultraviolet light emission from hydrogen flames: Flame detection and flame monitoring in CO2 emission free domestic boilers
Bielefeld, S.E., TU Delft Electrical Engineering, Mathematics and Computer Science
Master Thesis

Abstract
As a contribution to the decarbonisation of domestic heating, the graduation project investigates the feasibility of the application of UV sensor technology for flame detection and flame monitoring in hydrogen-powered domestic gas boilers. The research includes empirical studies and an analytical approach to describe influences on the sensor signal strength.

2021 – TOCONs with reduced dead times used for the detection of fire and combustion burner flames
Dr. Tilman Weiss, sglux GmbH, Berlin, Germany

TOCONs for the detection of fire and combustion burner flames

Abstract
The standard sglux TOCONs are featured by a relatively high time constant that extends from 30 ms (low sensitivity TOCONs) until 80 ms (high sensitivity TOCONs). Most of the TOCON applications benefit from this high time constant because usually the TOCON’s application is to measure a UV irradiation that slowly changes. Such applications are e.g. the control of UV disinfection and UV curing sources. Short changes of signal caused by electromagnetic or high frequency influences are averaged – which is a benefit. However, looking at flame detection in heaters or looking at fire detection applications this relatively high time constant may cause problems. The present report presents opportunities to reduce the dead time of the TOCONs.

2020 – UV sensors for hydrogen flame detection
Dr. Tilman Weiss, sglux GmbH, Berlin, Germany
UV sensors for hydrogen flame detection

Abstract
Pursuing the goal of decarburization of the energy use, the substition of petroleum gas by hydrogen gas produced with renewable energy is a very promising approach.

This requires a certain modification of the heaters. A major change will be the modification of the EN298 compliant flame sensing feature. Currently, sensing petroleum gas flames, electric ionization sensors are used – a rugged, reliable and inexpensive method. However, if hydrogen gas is added to the petroleum gas or if the gas entirely consists of hydrogen these ionization sensors can not be further applied. The reason is a changed reaction kinetics where the ionization effect can not be detected by these conventional sensors. This challenge can be mastered by use of opto-electronic UV sensors. These sensors reliably detect all kind of flames while “seeing” their characteristic emission spectrum in the ultraviolet light range. As UV sensors are more expensive than ionization detectors currently the UV sensors are only applied in highly priced industrial burners but not in household burners. However, according the current state of the knowledge, no other method than opto-electronic UV sensors are able to reliably detect a hydrogen flame.

Since 2006 we produce the TOCONs ABC1 and ABC2 for the EN298 compliant detection of petroleum gas flames in household burners. Our new TOCON_F series is designed for the detection of hydrogen flames.

The difference of the new TOCON_F to the standard ABC1 and ABC2 TOCONs is a reduced off dead-time. This off dead-time occurs with the standard TOCONs when they are saturated and can extend to several 100 milliseconds. The TOCON_F with its logarithmic amplifier shrinks this dead-time to less than 70 milliseconds. Accordingly the reaction time after the flame’s (unwanted) distinction could be strongly increased. Even if the standard TOCONs ABC1 and ABC2 are fast enough (compliant with EN298) to be applied in flame sensing modules (EN298 claims a reaction time of less than 1000 milliseconds) – the requirements of the EN298 standard could be tightened in the future. The reason of this assumption is the significantly higher rate of spread and ignition range of a hydrogen flame compared with a petroleum gas flame. Hence a UV sensor module that works with a TOCON_F offers shorter reaction times than currently required by the standard. This makes these flame sensing modules future-proof in case of a possible revision of the standard.

2019 – UV degradation anaylsis of SiC and AlGaN based UV photodiodes
Dr. Niklas Papathanasiou, sglux GmbH, Berlin, Germany

SiC AlGaN Aging Report

Abstract
SiC and AlGaN based UV photodiodes had been irradiated by Hg medium pressure lamps for 90 hours and a UV irradiation intensity of 60mW/cm². The SiC photodiodes showed no measurable degradation whereas the AlGaN photodiodes lost 80 % – 85 % of sensitivity.

2012 – Highly reliable Silicon Carbide photodiodes for visible-blind ultraviolet detector applications
D. Prasai¹, W. John¹, L. Weixelbaum¹, O. Krueger¹, G. Wagner², P. Sperfeld³, S. Nowy³, D. Friedrich³, S. Winter³ and T. Weiss⁴,
¹Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Berlin, Germany, ²Leibniz-Institut fuer Kristallzuechtung, Berlin, Germany, ³Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), 4.1 Photometry and Applied Radiometry, Braunschweig, Germany, ⁴sglux GmbH, Berlin, Germany

J. Mater. Res., first view (2012).

Abstract
Highly efficient polytype 4H silicon carbide (4H-SiC) p–n diodes for ultraviolet (UV) light detection have been fabricated, characterized, and exposed to high-intensity mercury lamp irradiation (up to 17 mW/cm²). The behavior of the photocurrent response under UV light irradiation using a low-pressure mercury UV-C lamp (4 mW/cm²) and a medium-pressure mercury discharge lamp (17 mW/cm²) has been studied. We report on long-term UV photoaging tests performed for up to 22 mo. Results demonstrate the robustness of SiC photodiodes against UV radiation. The devices under test showed an initial burn-in effect, i.e., the photocurrent response dropped by less than 5% within the first 40 h of artificial UV aging. Such burn-in effect under UV stress was also observed for previously available polytype 6H silicon carbide (6H–SiC) p–n photodetectors. After burn-in, no measurable degradation has been detected, which makes the devices excellent candidates for high irradiance UV detector applications.
2011 – Characterisation of SiC photodiodes for high irradiance UV radiometers
S. Nowy¹, B. Barton¹, S. Pape¹, P. Sperfeld¹, D. Friedrich¹, S. Winter¹, G. Hopfenmueller², and T. Weiss²,
¹Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), 4.1 Photometry and Applied Radiometry, Braunschweig, Germany, ²sglux GmbH, Berlin, Germany

Proceedings of NEWRAD2011, edited by S. Park and E. Ikonen. (Aalto University, Espoo, Finland, 2011) p. 203.

Abstract
For monitoring high UV irradiance, silicon carbide (SiC) based photodiodes are used. In this paper we describe the characterization of the novel SiC UV photodiodes in terms of their spectral and integral responsivity. Special attention is paid to the aging behavior of the photodiodes due to high UV irradiance. Artificial aging of the samples is performed by illumination with a high power medium pressure mercury discharge lamp.

View all publications

We gladly advise you on this product

Romana Sonnenberg
Romana Sonnenberg
Dipl.-Ing.

+49 (0) 30 53015211
Tilman Weiss
Tilman Weiss
Dr.-Ing.

+49 (0) 30 53015211

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UV Photodiodes FAQ

Why are there photodiodes with different chip active areas?
Summary:
Decreasing irradiance requires increasing chip active area. If the irradiance to be measured is unknown, an L-chip photodiode should be used for prototypes.
Detailed answer:
The active area of the chip determines how many photons can be collected by a photodetector. Semiconductor detectors, such as SiC UV photodiodes, convert photons into an electrical current, the photocurrent I. This photocurrent increases linearly with the irradiance and the active area of the chip. Since the price of the detector increases with the active area, the choice of area is essentially a compromise between cost and photocurrent. If you know the minimum and maximum irradiance you wish to measure with the UV photodiode, the following simplified formula gives a rough estimate of the photocurrent I for a given chip active area AChip. I=Achip *Eλ *1000 where I is the photocurrent in nA, A is the active chip area in mm² (enter values of 0.06 or 0.2 or 0.5 or 1 or 1.82 or 7.6 or 36) and Eλ is the spectral irradiance of the UV light source you like to measure in mW/cm². The minimum current (photodiode output at the lowest irradiance to be measured) should not be less than 500pA. If you do not know Eλ, the L-chip (1.00mm²) type photodiode should be used for a first evaluation step.
When do I need a broadband photodiode and when do I need filtered photodiodes for UVA, UVB, UVC or UV index?
Summary:
For UV measurement, unfiltered broadband SiC is used by default
Detailed answer:
By default, unfiltered broadband SiC is used for UV measurements. If a UV source also emits radiation that must not contribute to the sensor’s signal (e.g. UV medium pressure lamps used for water or air purification that also emit non-germicidal UV radiation), a filtered SiC detector (UVC, UVB+C or UVA only) should be selected.
Which photodiode do I use for 185nm and 172nm?
Summary:
Our SiC-VUV photodiodes are used here.
Detailed answer:
Our standard SiC photodiodes only have a low sensitivity below 220nm. Below approx. 200nm they have they no longer have any sensitivity. For applications where radiation below 220nm needs to be measured, our VUV (“vaccum UV”) photodiodes are used. Typical applications are the destruction (cracking) of organic carbons in fat or in water (TOC) at 185nm or the matting of paints at 172nm. VUV photodiodes are also used to monitor PFAS photolysis.
Do you produce SMD type photodiodes?
Summary:
Yes, but we do not recommend their use.
Detailed answer:
Yes, we manufacture 3535 SMD type photodiodes (ceramic package), but we recommend the use of metal TO photodiodes. The packaging and hermetic sealing of photodiode chips in metal TO housings with a fused glass window is a mature and extremely reliable process that has been in use for more than 50 years. A TO-packaged sglux SiC UV photodiode is usually the most reliable and durable component in a product, even when exposed to very high UV radiation or operated at high temperature levels. However, recent progress in the development of long life UV LEDs, also in the UVC range, allow UV low pressure tubes to be replaced by these LEDs, resulting in a significant potential reduction in product dimensions. The miniaturization of products such as UV transmittance measurement modules or point-of-use LED UVC disinfection modules allows our customers to move into new areas of application. Sometimes our TO-packaged UV photodiodes are considered too bulky. Our SiC SMD photodiode range is designed for these applications. The package consists of a ceramic body with a mineral window glass to make these SMD photodiodes as reliable as possible. However, TO type photodiodes remain the best choice in terms of durability, reliability and price.
You produce photodiodes with 2 pins and with 3 pins. What is the third pin good for?
Summary:
By default, 2-pin photodiodes are used.
Detailed answer:
By default, 2-pin photodiodes are used. One pin is connected to the metal body of the photodiode and to the anode. The other pin is isolated and connected to the cathode. A 3-pin photodiode is characterized by two isolated pins (connected to the anode and cathode) and one pin connected to the metal case. The 3-pin photodiode is used if the photodiode package is in contact with metal components of the customer's product.
What is the response time of a SiC photodiode?
Summary:
The response time is about 190ps (FWHM).
Detailed answer:
At the Helmholtz-Zentrum Berlin, investigations were carried out on pulse excitation with 266 nm fs laser pulses. The response time of the measured SiC photodiodes is determined by a decay constant of 7 ns at 0 V BIAS voltage. At a maximum BIAS voltage of -160 V, this converges in an exponential relationship towards 3.5 ns. The rise time could not be measured precisely with the available setup, but is faster than 80 ps (sigma), i.e. approx. 190 ps (FWHM).
What about the saturation of the photodiodes?
Summary:
An S-chip type photodiode saturates at around 4.2 kW/cm². Such a high irradiance is very unusual.
Detailed answer:
The saturation current Isat of a photodiode is determined by its open circuit voltage VOC and its series resistance RS according to the formula: Isat = VOC / RS A typical value (SiC photodiode) for VOC is 2.0 V and for RS = 5 Ohm. This gives Isat = 2.0 V / 5 Ohm = 0.4 A = 400 mA. The saturation radiant intensity z is calculated using the formula below: z = Isat / (S * A) Where S is the sensitivity of a photodiode and A is the active area. A typical value for S is 0.16 A/W and A = 0.06 mm² (valid for SG01S). This gives: zsat = 0.4 A / (0.160 A/W * 6 * 10-8 m²) = approx. 42 MW/m² = 4.2 kW/cm². Such a high irradiance is very unusual. However, some laser measurement applications can reach such irradiance levels for short periods of time. This may affect the output current of the photodiode. Please contact us for further information.
Is the photodiode waterproof?
Summary:
Yes.
Detailed answer:
Yes, the photodiode is hermetically sealed and, accordingly, water pressure proof. However, the rear side contact pins must not get in contact with water our moisture. This will influence the photodiode’s output current.
sglux GmbH 2024
Richard-Willstätter-Str. 8
D-12489 Berlin
Tel: +49 (0) 30 53 01 52 11
Mail: welcome@sglux.de
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