G. Hopfenmueller¹, T.Weiss¹, B. Barton², P. Sperfeld², S. Nowy², S. Pape², D. Friedrich², S. Winter², A. Towara², A. Hoepe², S. Teichert²,
¹sglux GmbH, Berlin, Germany, ²Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), 4.1 Photometry and Applied Radiometry, Braunschweig, Germany
2010-2012 – Development and setting up of a calibration facility for UV sensors at high irradiation rates
Partner: Physikalisch-Technische Bundesanstalt in Braunschweig und Berlin (PTB) und sglux GmbH
period: 2010 – 2012
acknowledgements: BMWi ZIM 2194602RR9
Abstract
Processes like UV water purification or UV hardening require high intensity UV radiation where a traceable calibration did not exist. German sglux GmbH together with PTB (Physikalisch-Technische Bundesanstalt, German national metrology institute) developed the world’s first traceable calibration standard for high irradiation level, in particular for UV water purification sensor calibration
Veröffentlichungen
B. Barton¹, P. Sperfeld¹, A. Towara¹, G. Hopfenmueller²,
¹Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), 4.1 Photometry and Applied Radiometry, Braunschweig, Germany, ²sglux GmbH, Berlin, Germany
“Developing and setting up a calibration facility for UV sensors at high irradiance rates”
EMEA Regional Conference, Karlsruhe, Germany (2013)
P. Sperfeld¹, B. Barton¹, S. Pape¹, G. Hopfenmueller²,
¹Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), 4.1 Photometry and Applied Radiometry, Braunschweig, Germany, ²sglux GmbH, Berlin, Germany
“Traceable spectral irradiance measurements at UV water disinfection facilities”
EMEA Regional Conference, Karlsruhe, Germany (2013)
G. Hopfenmueller¹, T. Weiss¹, B. Barton², P. Sperfeld², S. Nowy², S. Pape², D. Friedrich², S. Winter², A. Towara², A. Hoepe², S. Teichert²,
¹sglux GmbH, Berlin, Germany, ²Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), 4.1 Photometry and Applied Radiometry, Braunschweig, Germany
“PTB traceable calibrated reference UV radiometer for measurements at high irradiance medium pressure mercury discharge lamps”
EMEA Regional Conference, Karlsruhe, Germany (2013)
P. Sperfeld¹, B. Barton¹, S. Pape¹, A. Towara¹, J. Eggers², G. Hopfenmueller³,
¹Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), Germany, ²DVGW-Technologiezentrum Wasser, Karlsruhe, Germany, ³sglux GmbH, Berlin, Germany
“Spectral irradiance measurement and actinic radiometer calibration for UV water disinfection”
Metrologia, issue 51 (2014), S. 282-288.
P. Sperfeld¹, B. Barton¹, S. Pape¹, A. Towara¹, J. Eggers², G. Hopfenmueller³,
¹Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), Germany, ²DVGW-Technologiezentrum Wasser, Karlsruhe, Germany, ³sglux GmbH, Berlin, Germany
“Spectral Irradiance Measurement and Actinic Radiometer Calibration for UV Water Disinfection”
Proceedings of NEWRAD 2014, edited by S. Park, P. Kaerhae and E. Ikonen. (Aalto University, Espoo, Finland 2014) p. 128.
2012 – Highly reliable Silicon Carbide photodiodes for visible-blind ultraviolet detector applications
D. Prasai¹, W. John¹, L. Weixelbaum¹, O. Krueger¹, G. Wagner², P. Sperfeld³, S. Nowy³, D. Friedrich³, S. Winter³ and T. Weiss⁴,
¹Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Berlin, Germany, ²Leibniz-Institut fuer Kristallzuechtung, Berlin, Germany, ³Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), 4.1 Photometry and Applied Radiometry, Braunschweig, Germany, ⁴sglux GmbH, Berlin, Germany
J. Mater. Res., first view (2012).
Abstract
Highly efficient polytype 4H silicon carbide (4H-SiC) p–n diodes for ultraviolet (UV) light detection have been fabricated, characterized, and exposed to high-intensity mercury lamp irradiation (up to 17 mW/cm²). The behavior of the photocurrent response under UV light irradiation using a low-pressure mercury UV-C lamp (4 mW/cm²) and a medium-pressure mercury discharge lamp (17 mW/cm²) has been studied. We report on long-term UV photoaging tests performed for up to 22 mo. Results demonstrate the robustness of SiC photodiodes against UV radiation. The devices under test showed an initial burn-in effect, i.e., the photocurrent response dropped by less than 5% within the first 40 h of artificial UV aging. Such burn-in effect under UV stress was also observed for previously available polytype 6H silicon carbide (6H–SiC) p–n photodetectors. After burn-in, no measurable degradation has been detected, which makes the devices excellent candidates for high irradiance UV detector applications.
2011 – Characterisation of new optical diffusers used in high irradiance UV radiometers
Barton¹, B., Sperfeld¹, P., Nowy¹, S., Towara¹, A., Hoepe¹, A., Teichert¹, S., Hopfenmueller², G., Baer³, M. and Kreuzberger³, T.
¹Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), 4.1 Photometry and Applied Radiometry, Braunschweig, Germany, ²sglux GmbH, Berlin, Germany, ³SGIL Silicaglas GmbH, Langewiesen, Germany
Abstract
Diffusers are essential components of UV radiometers used as transfer standards. They improve the insensitivity to differing radiation situations. In combination with a beam limiting aperture, a diffuser defines the irradiated area [1]. A detailed study of different properties of UV diffusers is shown.
2011 – Characterisation of SiC photodiodes for high irradiance UV radiometers
Partner: Physikalisch-Technische Bundesanstalt in Braunschweig und Berlin (PTB) und sglux GmbH
period: 2011
acknowledgements: BMWi ZIM 2194602RR9
Abstract
For monitoring high UV irradiance, silicon carbide (SiC) based photodiodes are used. This project characterized novel SiC UV photodiodes in terms of their spectral and integral responsivity. Special attention was paid to the aging behavior of the photodiodes due to high UV irradiance. Artificial aging of the samples were performed by illumination with a high power medium pressure mercury discharge lamp. After burn in no degradation could be measured.
Publications
S. Nowy¹, B. Barton¹, S. Pape¹, P. Sperfeld¹, D. Friedrich¹, S. Winter¹, G. Hopfenmueller², T. Weiss²,
¹Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), 4.1 Photometry and Applied Radiometry, Braunschweig, Germany, ²sglux GmbH, Berlin, Germany
“Characterisation of SiC photodiodes for high irradiance UV radiometers”
Proceedings of NEWRAD2011, edited by S. Park and E. Ikonen. (Aalto University, Espoo, Finland, 2011) p. 203.
2011 – Characterisation of new optical diffusers used in high irradiance UV radiometers
Partner: Physikalisch-Technische Bundesanstalt in Braunschweig und Berlin (PTB) und sglux GmbH
period: 2011
acknowledgements: BMWi ZIM 2194602RR9
Abstract
A detailed study of different properties of UV diffusers was performed. Diffusers are essential components of UV radiometers used as transfer standards. They improve the insensitivity to differing radiation situations.
Publications
Barton¹, B., Sperfeld¹, P., Nowy¹, S., Towara¹, A., Hoepe¹, A., Teichert¹, S., Hopfenmueller², G., Baer³, M. and Kreuzberger³, T.
¹Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), 4.1 Photometry and Applied Radiometry, Braunschweig, Germany, ²sglux GmbH, Berlin, Germany, ³SGIL Silicaglas GmbH, Langewiesen, Germany
“Characterisation of new optical diffusers used in high irradiance UV radiometers”
Proceedings of NEWRAD2011, edited by S. Park and E. Ikonen. (Aalto University, Espoo, Finland, 2011) p. 278.
2011 – Characterisation of SiC photodiodes for high irradiance UV radiometers
S. Nowy¹, B. Barton¹, S. Pape¹, P. Sperfeld¹, D. Friedrich¹, S. Winter¹, G. Hopfenmueller², and T. Weiss²,
¹Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), 4.1 Photometry and Applied Radiometry, Braunschweig, Germany, ²sglux GmbH, Berlin, Germany
Abstract
For monitoring high UV irradiance, silicon carbide (SiC) based photodiodes are used. In this paper we describe the characterization of the novel SiC UV photodiodes in terms of their spectral and integral responsivity. Special attention is paid to the aging behavior of the photodiodes due to high UV irradiance. Artificial aging of the samples is performed by illumination with a high power medium pressure mercury discharge lamp.
2008-2010 – Development of a SiC photodiode wafer production process
Partner: Leibniz Ferdinand Braun Institut für Höchstfrequenztechnik (FBH), Leibniz Institut für Kristallzüchtung (IKZ), sglux GmbH
period: 2008- 2010
acknowledgements: BMWi ZIM 2194601DB9
Abstract
Highly efficient polytype 4H silicon carbide (4H-SiC) p–n diodes for ultraviolet (UV) light detection have been fabricated, characterized, and exposed to high-intensity mercury lamp irradiation (up to 17 mW/cm²). The behavior of the photocurrent response under UV light irradiation using a low-pressure mercury UV-C lamp (4 mW/cm²) and a medium-pressure mercury discharge lamp (17 mW/cm²) has been studied. Long-term UV photoaging tests had been performed for up to 22 months. Results demonstrate the robustness of SiC photodiodes against UV radiation. The devices under test showed an initial burn-in effect, i.e., the photocurrent response dropped by less than 5% within the first 40 h of artificial UV aging. Such burn-in effect under UV stress was also observed for previously available polytype 6H silicon carbide (6H–SiC) p–n photodetectors. After burn-in, no measurable degradation has been detected, which makes the devices excellent candidates for high irradiance UV detector applications.
Publications
D. Prasai¹, W. John¹, L. Weixelbaum¹, O. Krueger¹, G. Wagner², P. Sperfeld³, S. Nowy³, D. Friedrich³, S. Winter³ and T. Weiss⁴,
¹Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Berlin, Germany, ²Leibniz-Institut fuer Kristallzuechtung, Berlin, Germany, ³Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), 4.1 Photometry and Applied Radiometry, Braunschweig, Germany, ⁴sglux GmbH, Berlin, Germany
“Highly reliable Silicon Carbide photodiodes for visible-blind ultraviolet detector applications”
J. Mater. Res., first view (2012).
2008-2009 – Electronic and photoelectrical properties of semiconducting titanium dioxide layers
Partner: Technische Hochschule Wildau, sglux GmbH
period: 2008-2009
acknowledgements: BMBF 13N9586
Abstract
Electronic and photoelectrical properties of semiconducting titanium dioxide layers had been investigated and improved.
Publication
C. Nitschke
“Electronic and photoelectrical properties of semiconducting titanium dioxide layers”
Beuth Hochschule für Technik, Master Thesis, 2009
2009 – Electronic and photoelectrical properties of semiconducting titanium dioxide layers
C. Nitschke
Beuth Hochschule für Technik, Master Thesis, 2009
Abstract
In the present thesis electronic and photoelectrical properties of semiconducting titanium dioxide layers were measured using different measuring methods. The titanium dioxide layers had been produced using the sol-gel-process with different precursor solutions. The findings and insights gained shall be used to manipulate the structure and functionality of UV-photodiodes with titanium-dioxide-layers. Traps had been proven both by the analysis of the spectral resolution of the photocurrent and thermally stimulated luminescence. These traps are affected by the titanium dioxide-layer manufacturing process. Using the impedance spectroscopy, the UV-photodiodes inner structure, the width of the space charge layer and the electrical conduction of the titanium dioxide-layer grains and grain boundaries could be measured. Between the impedance of the UV-photodiodes and the speed of reaction a correlation could be noticed. Additionally voltage dependent current and capacity measurements had been carried out as well as thermally stimulated currents had been measured.
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