Dr. Tilman Weiss¹, Fred Perry²
¹sglux GmbH, Berlin, Germany
²Boston Electronics Corporation, Brookline, USA
Journal Contribution to the IUVA UV Solutions Magazine (c) IUVA
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Dr. Tilman Weiss¹, Fred Perry²
¹sglux GmbH, Berlin, Germany
²Boston Electronics Corporation, Brookline, USA
Journal Contribution to the IUVA UV Solutions Magazine (c) IUVA
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Dr. Tilman Weiss, sglux GmbH, Berlin, Germany
Abstract
Sensor Magazin 4/2024 (c) Magazin Verlag
UV radiation is used in many areas of industrial production, in medical devices and for disinfection. Precise measurement of irradiance is important for the controlled and efficient use of UV radiation. The UV measuring devices used for these applications must be able to measure the UV irradiance reliably, reproducibly and traceably over 13 orders of magnitude, from a few pW/cm2 up to 10 W/cm2. This is where digital measuring probes show their strengths.
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Dr. Niklas Papathanasiou, sglux GmbH, Berlin, Germany
Sensor Magazin 2/2024 (c) Magazin Verlag
Abstract
For more than 20 years, the Berlin-based company sglux GmbH has been producing photodiodes and sensors for measuring UV radiation, as used in many areas of industrial production, medical technology, combustion control and for monitoring UV disinfection processes. The precise detection of the ultraviolet irradiance is of great importance for a controlled and efficient functioning. sglux solves these tasks with SiC-based photodiodes, since 2009 from in-house semiconductor production. SiC photodiodes have an advantage in the detection of UV radiation due to their high band gap of 3.26 eV, as they are insensitive to visible and near-infrared radiation. In addition, SiC photodiodes have very low dark currents, so that even the smallest amounts of radiation can be detected. In the measurement of strong UV radiation, SiC scores with its high resistance to degradation.
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Gabriel Hopfenmüller, Dr. Niklas Papathanasiou, sglux GmbH, Berlin, Germany
InterAqua Japan 01. – 03.02.2023
Approaches of LED in-line measurements and its traceable calibration
Abstract
UV measurement at UV LED arrays.
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M. Schraml¹, N. Papathanasiou², A. May¹, M. Rommel¹, T. Erlbacher³
¹Fraunhofer IISB, Erlangen, Germany
²sglux GmbH, Berlin, Germany
³Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen, Germany
2023 IEEE Photonics Conference (IPC) 12. – 16.11.2023
4H-SiC PIN Photodiode for VUV Detection Using an Enhanced Emitter Doping Desig
Abstract
The fabrication of a novel Vacuum UV (VUV) sensitive 4H-SiC pin photodiode is presented. Aluminum ion implantation was used to fabricate a patterned emitter structure with p – and p + regions resulting in the highest reported VUV sensitivity for a SiC pin photodiode.
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Michael Schraml¹, Alexander May¹, Dr. Tobias Erlbacher¹, Dr. Niklas Papathanasiou², Dr. Tilman Weiss²,
¹Fraunhofer IISB, Erlangen, Germany
²sglux GmbH, Berlin, Germany
Zusammenfassung
4H silicon carbide (SiC) based pin photodiodes with a sensitivity in the vacuum ultraviolet spectrum (VUV) demand newly developed emitter doping profiles. This work features the first ever reported 4H-SiC pin photodiodes with an implanted p-emitter and a noticeable sensitivity at a wavelength of 200 nm. As a first step, Aluminum doping profiles produced by low energy ion implantation in 4H-SiC were characterized by secondary-ion mass spectrometry (SIMS). Photodiodes using these shallow emitters are compared to one with a deep p-emitter doping profile employing IV characteristics and the spectral response. SIMS results demonstrate the possibility of shallow Alimplantation profiles using low implantation energies with all emitter profiles featuring characteristic I-V results. For some shallow doping profiles, a meassurable signal at the upper limit of the VUV spectrum could be demonstrated, paving the way towards 4H-SiC pin photodiodes with sensitivities for wavelengths below 200 nm.
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Dr. Tilman Weiss, sglux GmbH, Berlin, Germany
How to determine the right UV sensor for flame detection?
Abstract
The present article informs about different approaches using UV photodetectors for the detection of a combustion flame (natural gas, hydrogen or oil).
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Luther W. Beegle et al.
Space Sci Rev (2021) 217:58
Abstract
The Scanning Habitable Environments with Raman and Luminescence for Organics and Chemicals (SHERLOC) is a robotic arm-mounted instrument on NASA’s Perseverance rover. SHERLOC has two primary boresights. The Spectroscopy boresight generates spatially resolved chemical maps using fluorescence and Raman spectroscopy coupled to microscopic images (10.1 μm/pixel). The second boresight is a Wide Angle Topographic Sensor for Operations and eNgineering (WATSON); a copy of the Mars Science Labora- tory (MSL) Mars Hand Lens Imager (MAHLI) that obtains color images from microscopic scales (∼13 μm/pixel) to infinity. SHERLOC Spectroscopy focuses a 40 μs pulsed deep UV neon-copper laser (248.6 nm), to a ∼100 μm spot on a target at a working distance of ∼48 mm. Fluorescence emissions from organics, and Raman scattered photons from organics and minerals, are spectrally resolved with a single diffractive grating spectrograph with a spectral range of 250 to ∼370 nm. Because the fluorescence and Raman regions are natu- rally separated with deep UV excitation (<250 nm), the Raman region ∼ 800 – 4000 cm−1 (250 to 273 nm) and the fluorescence region (274 to ∼370 nm) are acquired simultaneously without time gating or additional mechanisms. SHERLOC science begins by using an Aut- ofocus Context Imager (ACI) to obtain target focus and acquire 10.1 μm/pixel greyscale images. Chemical maps of organic and mineral signatures are acquired by the orchestration of an internal scanning mirror that moves the focused laser spot across discrete points on the target surface where spectra are captured on the spectrometer detector. ACI images and chemical maps (< 100 μm/mapping pixel) will enable the first Mars in situ view of the spa- tial distribution and interaction between organics, minerals, and chemicals important to the assessment of potential biogenicity (containing CHNOPS). Single robotic arm placement chemical maps can cover areas up to 7×7 mm in area and, with the < 10 min acquisition time per map, larger mosaics are possible with arm movements. This microscopic view of the organic geochemistry of a target at the Perseverance field site, when combined with the other instruments, such as Mastcam-Z, PIXL, and SuperCam, will enable unprecedented analysis of geological materials for both scientific research and determination of which sam- ples to collect and cache for Mars sample return.
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Dr. Niklas Papathanasiou, Gabriel Hopfenmueller, Dr. Tilman Weiss
sglux GmbH, Berlin, Germany
Abstract
In this contribution we report about SiC based UV photodiodes as the core component of smart UV sensors for various medical applications. In dialysis machines the transparency of urea is monitored by a SiC UV photodiode based UV transmission measurement module. A photodiode combined with an optical filter which reproduces the erythermal action spectrum helps Lupus patients to monitor their daily dose of solar UV radiation. sglux UVC sensor “UV-Safester” is a smartphone based tool to detect harmful UV radiation at a workplace employing the ICNIRP regulation. A wireless UV sensor module monitors the UV disinfection applied by disinfection robots in operating rooms.
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D. Prasai¹, W. John¹, L. Weixelbaum¹, O. Krueger¹, G. Wagner², P. Sperfeld³, S. Nowy³, D. Friedrich³, S. Winter³ and T. Weiss⁴,
¹Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Berlin, Germany, ²Leibniz-Institut fuer Kristallzuechtung, Berlin, Germany, ³Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), 4.1 Photometry and Applied Radiometry, Braunschweig, Germany, ⁴sglux GmbH, Berlin, Germany
J. Mater. Res., first view (2012).
Abstract
Highly efficient polytype 4H silicon carbide (4H-SiC) p–n diodes for ultraviolet (UV) light detection have been fabricated, characterized, and exposed to high-intensity mercury lamp irradiation (up to 17 mW/cm²). The behavior of the photocurrent response under UV light irradiation using a low-pressure mercury UV-C lamp (4 mW/cm²) and a medium-pressure mercury discharge lamp (17 mW/cm²) has been studied. We report on long-term UV photoaging tests performed for up to 22 mo. Results demonstrate the robustness of SiC photodiodes against UV radiation. The devices under test showed an initial burn-in effect, i.e., the photocurrent response dropped by less than 5% within the first 40 h of artificial UV aging. Such burn-in effect under UV stress was also observed for previously available polytype 6H silicon carbide (6H–SiC) p–n photodetectors. After burn-in, no measurable degradation has been detected, which makes the devices excellent candidates for high irradiance UV detector applications.