First SiC APDs from sglux

As part of the BMBF KMU Innovativ SiC4Flame project – FZK02P22K030 – sglux has produced the first SiC avalanche photodiodes (APDs) on 150 mm wafers together with Fraunhofer IISB Erlangen. In close cooperation with the Fraunhofer IISB team, sglux’ PhD student Felix Beier has developed a production-ready process for SiC APDs with a SACM device structure. The SiC APDs with diameters of 100 µm, 200 µm, 300 µm and 500 µm have a breakdown voltage of approximately Vbr=162.5 V and exhibit a gain m = 100 at 95% of the breakdown voltage V95%. The dark current at V95% is below 0.2 nA/mm². This means that SiC APDs have significantly better values than Si-based APDs and are also insensitive to visible radiation. Please contact us for samples for your application.