von sglux
Dr. Niklas Papathanasiou, sglux GmbH, Berlin, Germany
Abstract
SiC and AlGaN based UV photodiodes had been irradiated by Hg medium pressure lamps for 90 hours and a UV irradiation intensity of 60mW/cm². The SiC photodiodes showed no measurable degradation whereas the AlGaN photodiodes lost 80 % – 85 % of sensitivity.
von sglux
Gabriel Hopfenmüller, Dr. Niklas Papathanasiou, sglux GmbH, Berlin, Germany
InterAqua Japan 01. – 03.02.2023
Approaches of LED in-line measurements and its traceable calibration
Abstract
UV measurement at UV LED arrays.
von sglux
M. Schraml¹, N. Papathanasiou², A. May¹, M. Rommel¹, T. Erlbacher³
¹Fraunhofer IISB, Erlangen, Germany
²sglux GmbH, Berlin, Germany
³Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen, Germany
2023 IEEE Photonics Conference (IPC) 12. – 16.11.2023
4H-SiC PIN Photodiode for VUV Detection Using an Enhanced Emitter Doping Desig
Abstract
The fabrication of a novel Vacuum UV (VUV) sensitive 4H-SiC pin photodiode is presented. Aluminum ion implantation was used to fabricate a patterned emitter structure with p – and p + regions resulting in the highest reported VUV sensitivity for a SiC pin photodiode.
von sglux
C. Nitschke
Beuth Hochschule für Technik, Master Thesis, 2009
Abstract
In the present thesis electronic and photoelectrical properties of semiconducting titanium dioxide layers were measured using different measuring methods. The titanium dioxide layers had been produced using the sol-gel-process with different precursor solutions. The findings and insights gained shall be used to manipulate the structure and functionality of UV-photodiodes with titanium-dioxide-layers. Traps had been proven both by the analysis of the spectral resolution of the photocurrent and thermally stimulated luminescence. These traps are affected by the titanium dioxide-layer manufacturing process. Using the impedance spectroscopy, the UV-photodiodes inner structure, the width of the space charge layer and the electrical conduction of the titanium dioxide-layer grains and grain boundaries could be measured. Between the impedance of the UV-photodiodes and the speed of reaction a correlation could be noticed. Additionally voltage dependent current and capacity measurements had been carried out as well as thermally stimulated currents had been measured.
von sglux
B. Barton¹, P. Sperfeld¹, A. Towara¹, G. Hopfenmueller²,
¹Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), 4.1 Photometry and Applied Radiometry, Braunschweig, Germany, ²sglux GmbH, Berlin, Germany
EMEA Regional Conference, Karlsruhe, Germany (2013)
Abstract
PTB provides spectral irradiance calibrations traceable to national primary standards and the SI system. A transfer standard source for high UV irradiances has been constructed and characterized. A medium pressure Hg lamp and a low pressure Hg lamp provide different spectra at different irradiance levels. The system might serve as a calibration facility for DVGW & ÖNORM conform UV sensors. Calibration by direct substitution to reference sensors can be carried out.
von sglux
P. Sperfeld¹, B. Barton¹, S. Pape¹, A. Towara¹, J. Eggers², G. Hopfenmueller³,
¹Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), Germany, ²DVGW-Technologiezentrum Wasser, Karlsruhe, Germany, ³sglux GmbH, Berlin, Germany
Abstract
In a joint project, sglux and PTB investigated and developed methods and equipment to measure the spectral and weighted irradiance of high-efficiency UV-C emitters used in water disinfection plants. A calibration facility was set up to calibrate the microbicidal irradiance responsivity of actinic radiometers with respect to the weighted spectral irradiance of specially selected Hg low-pressure and medium-pressure UV radiators. To verify the calibration and to perform on-site tests, spectral measurements have been carried out directly at water disinfection plants in operation. The weighted microbicidal irradiance of the plants was calculated and compared to the measurements of various actinic radiometers.
von sglux
P. Sperfeld¹, B. Barton¹, S. Pape¹, G. Hopfenmueller²,
¹Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), 4.1 Photometry and Applied Radiometry, Braunschweig, Germany, ²sglux GmbH, Berlin, Germany
EMEA Regional Conference, Karlsruhe, Germany (2013)
Abstract
PTB provides spectral irradiance calibrations traceable to national primary standards and the SI system. Transportable spectroradiometer systems have been adapted for high UV irradiance measurements. Successful measurements at medium pressure Hg and low pressure Hg lamp facilities have been carried out. The effective microbicidal irradiances agree within 15%. 40° sensor geometry could be developed. Discussion about calibration service and support.
von sglux
S. Nowy¹, B. Barton¹, S. Pape¹, P. Sperfeld¹, D. Friedrich¹, S. Winter¹, G. Hopfenmueller², and T. Weiss²,
¹Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), 4.1 Photometry and Applied Radiometry, Braunschweig, Germany, ²sglux GmbH, Berlin, Germany
Abstract
For monitoring high UV irradiance, silicon carbide (SiC) based photodiodes are used. In this paper we describe the characterization of the novel SiC UV photodiodes in terms of their spectral and integral responsivity. Special attention is paid to the aging behavior of the photodiodes due to high UV irradiance. Artificial aging of the samples is performed by illumination with a high power medium pressure mercury discharge lamp.
von sglux
D. Prasai¹, W. John¹, L. Weixelbaum¹, O. Krueger¹, G. Wagner², P. Sperfeld³, S. Nowy³, D. Friedrich³, S. Winter³ and T. Weiss⁴,
¹Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Berlin, Germany, ²Leibniz-Institut fuer Kristallzuechtung, Berlin, Germany, ³Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), 4.1 Photometry and Applied Radiometry, Braunschweig, Germany, ⁴sglux GmbH, Berlin, Germany
J. Mater. Res., first view (2012).
Abstract
Highly efficient polytype 4H silicon carbide (4H-SiC) p–n diodes for ultraviolet (UV) light detection have been fabricated, characterized, and exposed to high-intensity mercury lamp irradiation (up to 17 mW/cm²). The behavior of the photocurrent response under UV light irradiation using a low-pressure mercury UV-C lamp (4 mW/cm²) and a medium-pressure mercury discharge lamp (17 mW/cm²) has been studied. We report on long-term UV photoaging tests performed for up to 22 mo. Results demonstrate the robustness of SiC photodiodes against UV radiation. The devices under test showed an initial burn-in effect, i.e., the photocurrent response dropped by less than 5% within the first 40 h of artificial UV aging. Such burn-in effect under UV stress was also observed for previously available polytype 6H silicon carbide (6H–SiC) p–n photodetectors. After burn-in, no measurable degradation has been detected, which makes the devices excellent candidates for high irradiance UV detector applications.
von sglux
G. Hopfenmueller¹, T.Weiss¹, B. Barton², P. Sperfeld², S. Nowy², S. Pape², D. Friedrich², S. Winter², A. Towara², A. Hoepe², S. Teichert²,
¹sglux GmbH, Berlin, Germany, ²Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), 4.1 Photometry and Applied Radiometry, Braunschweig, Germany