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2023-2025 – Development of a SiC-Avalanche-Photodiode

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Partner: Fraunhofer IISB, Erlangen
period: 2023 – 2025
acknowledgements: FZK02P22K030

Abstract
Development of a SiC-Avalanche-Photodiode for flame and fire detection
Fraunhofer IISB and sglux GmbH have started working on the development of a manufacturing process for a SiC-based avalanche photodiode (APD) as part of the “KMU-innovativ” project. An APD amplifies the photocurrent through the avalanche effect and therefore has a significantly higher sensitivity than a conventional SiC photodiode. Applications are in the area of flame and fire detection.
Successful completion of the project would create an interesting alternative to the gas discharge tubes currently in use. Although these tubes are capable of reliably detecting very low levels of UV radiation, they have disadvantages that are not found in semiconductor-based UV detectors: The gas discharge tubes are relatively large, fragile, require a high operating voltage and have a short service life.
The first prototypes of the novel SiC APD will be available in mid 2024.

2025 – Flame monitoring in industrial burners with semiconductor-based UV sensors focusing on hydrogen-flame

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Dr. Tilman Weiss, sglux GmbH, Berlin, Germany
Yuyu Kimura, IR System Co., Ltd., Tokyo, Japan

This article was first published in the Japanese Journal of Industrial Heating 2025, vol. 62, no. 3, Edition May
Flame monitoring in industrial burners with semiconductor-based UV sensors focusing on hydrogen-flame

Resumen
Using semiconductor based sensors for flame detection, such as presented with this article can be regarded as a fascinating approach not just with regards on costs and safety. Additionally, looking at environmental and sustainability aspects using semiconductor sensors instead of discharge tubes is a useful tool towards durability and longevity. The possibility of working with two different sensor chips for two different kind of irradiadion (UV and IR) in one small size sensor housing opens up a multitude of new and interesting application possibilities.

First SiC APDs from sglux

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As part of the BMBF KMU Innovativ SiC4Flame project – FZK02P22K030 – sglux has produced the first SiC avalanche photodiodes (APDs) on 150 mm wafers together with Fraunhofer IISB Erlangen. In close cooperation with the Fraunhofer IISB team, sglux’ PhD student Felix Beier has developed a production-ready process for SiC APDs with a SACM device structure. The SiC APDs with diameters of 100 µm, 200 µm, 300 µm and 500 µm have a breakdown voltage of approximately Vbr=162.5 V and exhibit a gain m = 100 at 95% of the breakdown voltage V95%. The dark current at V95% is below 0.2 nA/mm². This means that SiC APDs have significantly better values than Si-based APDs and are also insensitive to visible radiation. Please contact us for samples for your application.

2024 – Measuring UV radiation without filters – silicon carbide (SiC) photodiodes make it possible

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Dr. Niklas Papathanasiou, sglux GmbH, Berlin, Germany

Sensor Magazin 2/2024 (c) Magazin Verlag

Abstract
For more than 20 years, the Berlin-based company sglux GmbH has been producing photodiodes and sensors for measuring UV radiation, as used in many areas of industrial production, medical technology, combustion control and for monitoring UV disinfection processes. The precise detection of the ultraviolet irradiance is of great importance for a controlled and efficient functioning. sglux solves these tasks with SiC-based photodiodes, since 2009 from in-house semiconductor production. SiC photodiodes have an advantage in the detection of UV radiation due to their high band gap of 3.26 eV, as they are insensitive to visible and near-infrared radiation. In addition, SiC photodiodes have very low dark currents, so that even the smallest amounts of radiation can be detected. In the measurement of strong UV radiation, SiC scores with its high resistance to degradation.

2024 Digital UV Sensors – The Smartphone becomes a Radiometer

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Dr. Tilman Weiss, sglux GmbH, Berlin, Germany

Abstract

Sensor Magazin 4/2024 (c) Magazin Verlag

UV radiation is used in many areas of industrial production, in medical devices and for disinfection. Precise measurement of irradiance is important for the controlled and efficient use of UV radiation. The UV measuring devices used for these applications must be able to measure the UV irradiance reliably, reproducibly and traceably over 13 orders of magnitude, from a few pW/cm2 up to 10 W/cm2. This is where digital measuring probes show their strengths.

2021-2024 – Development of an innovative electronic truffle detector

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Partner: Bundesanstalt für Materialforschung und -prüfung (BAM)
period: 2012 – 2024
acknowledgements: Landwirtschaftliche Rentenbank, 925486

Abstract
Truffles are regarded as delicacies all over the world. However, only few can afford. The price mainly is driven by the laborious harvesting method. Thoroughly trained sniffer dogs relatively ineffectively try to find the truffles in the ground. The present project aims to the development of an innovative electronic truffle detector and tries to offer an affordable and effective instrument for truffle harvesting. The scientific approach is to reliably detect the ultraviolet light emission of the seasoned truffle’s odor signature ((CH3)2S) while exposed to ozone. An inexpensive method of truffle harvesting would allow forest owners a more sustainable forest cultivation. Today the only means of income is the sales of wood. If additionally truffles could be easily harvested and sold, this would allow a more eco friendly cultivation of the threes, not only focussing on fast growing and well selling wood.

2023 – Towards Sic-Based VUV Pin-Photodiodes – Investigations on 4H-SiC Photodiodes with Shallow Implanted Al Emitters

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Michael Schraml¹, Alexander May¹, Dr. Tobias Erlbacher¹, Dr. Niklas Papathanasiou², Dr. Tilman Weiss²,
¹Fraunhofer IISB, Erlangen, Germany
²sglux GmbH, Berlin, Germany

Towards SiC-Based VUV Pin-Photodiodes – Investigations on 4H-SiC Photodiodes with Shallow Implanted Al Emitters

Zusammenfassung
4H silicon carbide (SiC) based pin photodiodes with a sensitivity in the vacuum ultraviolet spectrum (VUV) demand newly developed emitter doping profiles. This work features the first ever reported 4H-SiC pin photodiodes with an implanted p-emitter and a noticeable sensitivity at a wavelength of 200 nm. As a first step, Aluminum doping profiles produced by low energy ion implantation in 4H-SiC were characterized by secondary-ion mass spectrometry (SIMS). Photodiodes using these shallow emitters are compared to one with a deep p-emitter doping profile employing IV characteristics and the spectral response. SIMS results demonstrate the possibility of shallow Alimplantation profiles using low implantation energies with all emitter profiles featuring characteristic I-V results. For some shallow doping profiles, a meassurable signal at the upper limit of the VUV spectrum could be demonstrated, paving the way towards 4H-SiC pin photodiodes with sensitivities for wavelengths below 200 nm.

2023 – 4H-SiC PIN Photodiode for VUV Detection Using an Enhanced Emitter Doping Design

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M. Schraml¹, N. Papathanasiou², A. May¹, M. Rommel¹, T. Erlbacher³
¹Fraunhofer IISB, Erlangen, Germany
²sglux GmbH, Berlin, Germany
³Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen, Germany

2023 IEEE Photonics Conference (IPC) 12. – 16.11.2023
4H-SiC PIN Photodiode for VUV Detection Using an Enhanced Emitter Doping Desig

Abstract
The fabrication of a novel Vacuum UV (VUV) sensitive 4H-SiC pin photodiode is presented. Aluminum ion implantation was used to fabricate a patterned emitter structure with p – and p + regions resulting in the highest reported VUV sensitivity for a SiC pin photodiode.