J. Mater. Res., first view (2012).<\/a><\/strong><\/p>\nAbstract <\/em>
\nHighly efficient polytype 4H silicon carbide (4H-SiC) p\u2013n diodes for ultraviolet (UV) light detection have been fabricated, characterized, and exposed to high-intensity mercury lamp irradiation (up to 17 mW\/cm\u00b2). The behavior of the photocurrent response under UV light irradiation using a low-pressure mercury UV-C lamp (4 mW\/cm\u00b2) and a medium-pressure mercury discharge lamp (17 mW\/cm\u00b2) has been studied. We report on long-term UV photoaging tests performed for up to 22 mo. Results demonstrate the robustness of SiC photodiodes against UV radiation. The devices under test showed an initial burn-in effect, i.e., the photocurrent response dropped by less than 5% within the first 40 h of artificial UV aging. Such burn-in effect under UV stress was also observed for previously available polytype 6H silicon carbide (6H\u2013SiC) p\u2013n photodetectors. After burn-in, no measurable degradation has been detected, which makes the devices excellent candidates for high irradiance UV detector applications.<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"_genesis_hide_title":false,"_genesis_hide_breadcrumbs":false,"_genesis_hide_singular_image":false,"_genesis_hide_footer_widgets":false,"_genesis_custom_body_class":"","_genesis_custom_post_class":"","_genesis_layout":"","footnotes":""},"categories":[188,499],"tags":[379,421,533,529],"class_list":{"0":"post-10926","1":"post","2":"type-post","3":"status-publish","4":"format-standard","6":"category-recherche-fr","7":"category-publications-fr","8":"tag-calibration-fr","9":"tag-irradiance_all-fr","10":"tag-photodiodes-fr","11":"tag-prod-fr","12":"entry"},"acf":[],"yoast_head":"\n2012 - Highly reliable Silicon Carbide photodiodes for visible-blind ultraviolet detector applications | sglux<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/sglux.de\/fr\/2012-highly-reliable-silicon-carbide-photodiodes-for-visible-blind-ultraviolet-detector-applications\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"2012 - Highly reliable Silicon Carbide photodiodes for visible-blind ultraviolet detector applications | sglux\" \/>\n<meta property=\"og:description\" content=\"D. Prasai\u00b9, W. John\u00b9, L. Weixelbaum\u00b9, O. Krueger\u00b9, G. Wagner\u00b2, P. Sperfeld\u00b3, S. Nowy\u00b3, D. Friedrich\u00b3, S. Winter\u00b3 and T. Weiss\u2074, \u00b9Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Berlin, Germany, \u00b2Leibniz-Institut fuer Kristallzuechtung, Berlin, Germany, \u00b3Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), 4.1 Photometry and Applied Radiometry, Braunschweig, Germany, \u2074sglux GmbH, Berlin, Germany J. Mater. Res., first view (2012). Abstract Highly efficient polytype 4H silicon carbide (4H-SiC) p\u2013n diodes for ultraviolet (UV) light detection have been fabricated, characterized, and exposed to high-intensity mercury lamp irradiation (up to 17 mW\/cm\u00b2). The behavior of the photocurrent response under UV light irradiation using a low-pressure mercury UV-C lamp (4 mW\/cm\u00b2) and a medium-pressure mercury discharge lamp (17 mW\/cm\u00b2) has been studied. We report on long-term UV photoaging tests performed for up to 22 mo. Results demonstrate the robustness of SiC photodiodes against UV radiation. The devices under test showed an initial burn-in effect, i.e., the photocurrent response dropped by less than 5% within the first 40 h of artificial UV aging. Such burn-in effect under UV stress was also observed for previously available polytype 6H silicon carbide (6H\u2013SiC) p\u2013n photodetectors. After burn-in, no measurable degradation has been detected, which makes the devices excellent candidates for high irradiance UV detector applications.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/sglux.de\/fr\/2012-highly-reliable-silicon-carbide-photodiodes-for-visible-blind-ultraviolet-detector-applications\/\" \/>\n<meta property=\"og:site_name\" content=\"sglux\" \/>\n<meta property=\"article:published_time\" content=\"2012-06-11T13:04:33+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2025-06-11T13:12:30+00:00\" \/>\n<meta name=\"author\" content=\"sglux\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"\u00c9crit par\" \/>\n\t<meta name=\"twitter:data1\" content=\"sglux\" \/>\n\t<meta name=\"twitter:label2\" content=\"Dur\u00e9e de lecture estim\u00e9e\" \/>\n\t<meta name=\"twitter:data2\" content=\"1 minute\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\/\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\/\/sglux.de\/fr\/2012-highly-reliable-silicon-carbide-photodiodes-for-visible-blind-ultraviolet-detector-applications\/#article\",\"isPartOf\":{\"@id\":\"https:\/\/sglux.de\/fr\/2012-highly-reliable-silicon-carbide-photodiodes-for-visible-blind-ultraviolet-detector-applications\/\"},\"author\":{\"name\":\"sglux\",\"@id\":\"https:\/\/sglux.de\/fr\/#\/schema\/person\/2b3b322bc60340429a282cd9253a76ad\"},\"headline\":\"2012 – Highly reliable Silicon Carbide photodiodes for visible-blind ultraviolet detector applications\",\"datePublished\":\"2012-06-11T13:04:33+00:00\",\"dateModified\":\"2025-06-11T13:12:30+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\/\/sglux.de\/fr\/2012-highly-reliable-silicon-carbide-photodiodes-for-visible-blind-ultraviolet-detector-applications\/\"},\"wordCount\":213,\"publisher\":{\"@id\":\"https:\/\/sglux.de\/fr\/#organization\"},\"keywords\":[\"calibration\",\"irradiance_all\",\"photodiodes\",\"prod\"],\"articleSection\":[\"Recherche\",\"Ver\u00f6ffentlichungen und Berichte\"],\"inLanguage\":\"fr-FR\"},{\"@type\":\"WebPage\",\"@id\":\"https:\/\/sglux.de\/fr\/2012-highly-reliable-silicon-carbide-photodiodes-for-visible-blind-ultraviolet-detector-applications\/\",\"url\":\"https:\/\/sglux.de\/fr\/2012-highly-reliable-silicon-carbide-photodiodes-for-visible-blind-ultraviolet-detector-applications\/\",\"name\":\"2012 - 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Prasai\u00b9, W. John\u00b9, L. Weixelbaum\u00b9, O. Krueger\u00b9, G. Wagner\u00b2, P. Sperfeld\u00b3, S. Nowy\u00b3, D. Friedrich\u00b3, S. Winter\u00b3 and T. Weiss\u2074, \u00b9Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Berlin, Germany, \u00b2Leibniz-Institut fuer Kristallzuechtung, Berlin, Germany, \u00b3Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), 4.1 Photometry and Applied Radiometry, Braunschweig, Germany, \u2074sglux GmbH, Berlin, Germany J. Mater. Res., first view (2012). Abstract Highly efficient polytype 4H silicon carbide (4H-SiC) p\u2013n diodes for ultraviolet (UV) light detection have been fabricated, characterized, and exposed to high-intensity mercury lamp irradiation (up to 17 mW\/cm\u00b2). The behavior of the photocurrent response under UV light irradiation using a low-pressure mercury UV-C lamp (4 mW\/cm\u00b2) and a medium-pressure mercury discharge lamp (17 mW\/cm\u00b2) has been studied. 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