{"id":10891,"date":"2020-06-11T14:50:15","date_gmt":"2020-06-11T12:50:15","guid":{"rendered":"https:\/\/sglux.de\/2020-where-sic-can-replace-discontinued-gap\/"},"modified":"2025-06-11T15:06:23","modified_gmt":"2025-06-11T13:06:23","slug":"2020-where-sic-can-replace-discontinued-gap","status":"publish","type":"post","link":"https:\/\/sglux.de\/fr\/2020-where-sic-can-replace-discontinued-gap\/","title":{"rendered":"2020 &#8211; Where SiC can replace discontinued GaP?"},"content":{"rendered":"<p>Dr. Tilman Weiss, sglux GmbH, Berlin, Germany<\/p>\n<p><strong><a href=\"https:\/\/download.sglux.de\/publications\/sglux_SiC_GaP_compare_TechRep.pdf\" target=\"_blank\" rel=\"noopener noreferrer\">Technical Report \u00ab\u00a0Where SiC can replace discontinued GaP?\u00a0\u00bb<\/a><\/strong><\/p>\n<p align=\"justify\"><em>Abstract<\/em><br \/>\nFor measurement applications with a peak radiation between 210 nm and 346 nm (e.g. UV sterilization lamp or combustion flame control) a SiC UV photodiode can replace a GaP photodiode without restrictions \u2013 it will even output a higher photocurrent. A SiC device irradiated with a peak radiation from 346 to 380 nm will output a lower photocurrent compared with GaP (at same active area). However, if the radiation intensity is high, e.g. curing applications at 365 nm the SiC\u2019s current output will remain at a usable level.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Dr. Tilman Weiss, sglux GmbH, Berlin, Germany <\/p>\n<p><strong><a href=\"https:\/\/download.sglux.de\/publications\/sglux_SiC_GaP_compare_TechRep.pdf\" target=\"_blank\" rel=\"noopener noreferrer\">Technical Report \u00ab\u00a0Where SiC can replace discontinued GaP?\u00a0\u00bb<\/a><\/strong><\/p>\n<p align=\"justify\"><em>Abstract<\/em><br \/>\nFor measurement applications with a peak radiation between 210 nm and 346 nm (e.g. UV sterilization lamp or combustion flame control) a SiC UV photodiode can replace a GaP photodiode without restrictions \u2013 it will even output a higher photocurrent. A SiC device irradiated with a peak radiation from 346 to 380 nm will output a lower photocurrent compared with GaP (at same active area). However, if the radiation intensity is high, e.g. curing applications at 365 nm the SiC\u2019s current output will remain at a usable level.<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"_genesis_hide_title":false,"_genesis_hide_breadcrumbs":false,"_genesis_hide_singular_image":false,"_genesis_hide_footer_widgets":false,"_genesis_custom_body_class":"","_genesis_custom_post_class":"","_genesis_layout":"","footnotes":""},"categories":[188,499],"tags":[533],"class_list":{"0":"post-10891","1":"post","2":"type-post","3":"status-publish","4":"format-standard","6":"category-recherche-fr","7":"category-publications-fr","8":"tag-photodiodes-fr","9":"entry"},"acf":[],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v26.6 - https:\/\/yoast.com\/wordpress\/plugins\/seo\/ -->\n<title>2020 - Where SiC can replace discontinued GaP? | sglux<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/sglux.de\/fr\/2020-where-sic-can-replace-discontinued-gap\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"2020 - Where SiC can replace discontinued GaP? | sglux\" \/>\n<meta property=\"og:description\" content=\"Dr. Tilman Weiss, sglux GmbH, Berlin, Germany   Technical Report &quot;Where SiC can replace discontinued GaP?&quot; Abstract For measurement applications with a peak radiation between 210 nm and 346 nm (e.g. UV sterilization lamp or combustion flame control) a SiC UV photodiode can replace a GaP photodiode without restrictions \u2013 it will even output a higher photocurrent. A SiC device irradiated with a peak radiation from 346 to 380 nm will output a lower photocurrent compared with GaP (at same active area). 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A SiC device irradiated with a peak radiation from 346 to 380 nm will output a lower photocurrent compared with GaP (at same active area). 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