Towards SiC-Based VUV Pin-Photodiodes – Investigations on 4H-SiC Photodiodes with Shallow Implanted Al Emitters<\/a><\/strong><\/p>\nZusammenfassung<\/em>
\n4H silicon carbide (SiC) based pin photodiodes with a sensitivity in the vacuum ultraviolet spectrum (VUV) demand newly developed emitter doping profiles. This work features the first ever reported 4H-SiC pin photodiodes with an implanted p-emitter and a noticeable sensitivity at a wavelength of 200 nm. As a first step, Aluminum doping profiles produced by low energy ion implantation in 4H-SiC were characterized by secondary-ion mass spectrometry (SIMS). Photodiodes using these shallow emitters are compared to one with a deep p-emitter doping profile employing IV characteristics and the spectral response. SIMS results demonstrate the possibility of shallow Alimplantation profiles using low implantation energies with all emitter profiles featuring characteristic I-V results. For some shallow doping profiles, a meassurable signal at the upper limit of the VUV spectrum could be demonstrated, paving the way towards 4H-SiC pin photodiodes with sensitivities for wavelengths below 200 nm.<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"_genesis_hide_title":false,"_genesis_hide_breadcrumbs":false,"_genesis_hide_singular_image":false,"_genesis_hide_footer_widgets":false,"_genesis_custom_body_class":"","_genesis_custom_post_class":"","_genesis_layout":"","footnotes":""},"categories":[188,499],"tags":[401,421,549,377],"class_list":{"0":"post-10877","1":"post","2":"type-post","3":"status-publish","4":"format-standard","6":"category-recherche-fr","7":"category-publications-fr","8":"tag-flame-fr","9":"tag-irradiance_all-fr","10":"tag-science-fr","11":"tag-vuv-fr","12":"entry"},"acf":[],"yoast_head":"\n2023 - Towards Sic-Based VUV Pin-Photodiodes - Investigations on 4H-SiC Photodiodes with Shallow Implanted Al Emitters | sglux<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/sglux.de\/fr\/2023-towards-sic-based-vuv-pin-photodiodes-investigations-on-4h-sic-photodiodes-with-shallow-implanted-al-emitters\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"2023 - Towards Sic-Based VUV Pin-Photodiodes - Investigations on 4H-SiC Photodiodes with Shallow Implanted Al Emitters | sglux\" \/>\n<meta property=\"og:description\" content=\"Michael Schraml\u00b9, Alexander May\u00b9, Dr. Tobias Erlbacher\u00b9, Dr. Niklas Papathanasiou\u00b2, Dr. Tilman Weiss\u00b2, \u00b9Fraunhofer IISB, Erlangen, Germany \u00b2sglux GmbH, Berlin, Germany Towards SiC-Based VUV Pin-Photodiodes - Investigations on 4H-SiC Photodiodes with Shallow Implanted Al Emitters Zusammenfassung 4H silicon carbide (SiC) based pin photodiodes with a sensitivity in the vacuum ultraviolet spectrum (VUV) demand newly developed emitter doping profiles. This work features the first ever reported 4H-SiC pin photodiodes with an implanted p-emitter and a noticeable sensitivity at a wavelength of 200 nm. As a first step, Aluminum doping profiles produced by low energy ion implantation in 4H-SiC were characterized by secondary-ion mass spectrometry (SIMS). Photodiodes using these shallow emitters are compared to one with a deep p-emitter doping profile employing IV characteristics and the spectral response. SIMS results demonstrate the possibility of shallow Alimplantation profiles using low implantation energies with all emitter profiles featuring characteristic I-V results. For some shallow doping profiles, a meassurable signal at the upper limit of the VUV spectrum could be demonstrated, paving the way towards 4H-SiC pin photodiodes with sensitivities for wavelengths below 200 nm.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/sglux.de\/fr\/2023-towards-sic-based-vuv-pin-photodiodes-investigations-on-4h-sic-photodiodes-with-shallow-implanted-al-emitters\/\" \/>\n<meta property=\"og:site_name\" content=\"sglux\" \/>\n<meta property=\"article:published_time\" content=\"2023-06-11T12:45:27+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2025-06-11T13:17:15+00:00\" \/>\n<meta name=\"author\" content=\"sglux\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"\u00c9crit par\" \/>\n\t<meta name=\"twitter:data1\" content=\"sglux\" \/>\n\t<meta name=\"twitter:label2\" content=\"Dur\u00e9e de lecture estim\u00e9e\" \/>\n\t<meta name=\"twitter:data2\" content=\"1 minute\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\/\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\/\/sglux.de\/fr\/2023-towards-sic-based-vuv-pin-photodiodes-investigations-on-4h-sic-photodiodes-with-shallow-implanted-al-emitters\/#article\",\"isPartOf\":{\"@id\":\"https:\/\/sglux.de\/fr\/2023-towards-sic-based-vuv-pin-photodiodes-investigations-on-4h-sic-photodiodes-with-shallow-implanted-al-emitters\/\"},\"author\":{\"name\":\"sglux\",\"@id\":\"https:\/\/sglux.de\/fr\/#\/schema\/person\/2b3b322bc60340429a282cd9253a76ad\"},\"headline\":\"2023 – Towards Sic-Based VUV Pin-Photodiodes – Investigations on 4H-SiC Photodiodes with Shallow Implanted Al Emitters\",\"datePublished\":\"2023-06-11T12:45:27+00:00\",\"dateModified\":\"2025-06-11T13:17:15+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\/\/sglux.de\/fr\/2023-towards-sic-based-vuv-pin-photodiodes-investigations-on-4h-sic-photodiodes-with-shallow-implanted-al-emitters\/\"},\"wordCount\":193,\"publisher\":{\"@id\":\"https:\/\/sglux.de\/fr\/#organization\"},\"keywords\":[\"flame\",\"irradiance_all\",\"science\",\"VUV\"],\"articleSection\":[\"Recherche\",\"Ver\u00f6ffentlichungen und Berichte\"],\"inLanguage\":\"fr-FR\"},{\"@type\":\"WebPage\",\"@id\":\"https:\/\/sglux.de\/fr\/2023-towards-sic-based-vuv-pin-photodiodes-investigations-on-4h-sic-photodiodes-with-shallow-implanted-al-emitters\/\",\"url\":\"https:\/\/sglux.de\/fr\/2023-towards-sic-based-vuv-pin-photodiodes-investigations-on-4h-sic-photodiodes-with-shallow-implanted-al-emitters\/\",\"name\":\"2023 - Towards Sic-Based VUV Pin-Photodiodes - Investigations on 4H-SiC Photodiodes with Shallow Implanted Al Emitters | sglux\",\"isPartOf\":{\"@id\":\"https:\/\/sglux.de\/fr\/#website\"},\"datePublished\":\"2023-06-11T12:45:27+00:00\",\"dateModified\":\"2025-06-11T13:17:15+00:00\",\"breadcrumb\":{\"@id\":\"https:\/\/sglux.de\/fr\/2023-towards-sic-based-vuv-pin-photodiodes-investigations-on-4h-sic-photodiodes-with-shallow-implanted-al-emitters\/#breadcrumb\"},\"inLanguage\":\"fr-FR\",\"potentialAction\":[{\"@type\":\"ReadAction\",\"target\":[\"https:\/\/sglux.de\/fr\/2023-towards-sic-based-vuv-pin-photodiodes-investigations-on-4h-sic-photodiodes-with-shallow-implanted-al-emitters\/\"]}]},{\"@type\":\"BreadcrumbList\",\"@id\":\"https:\/\/sglux.de\/fr\/2023-towards-sic-based-vuv-pin-photodiodes-investigations-on-4h-sic-photodiodes-with-shallow-implanted-al-emitters\/#breadcrumb\",\"itemListElement\":[{\"@type\":\"ListItem\",\"position\":1,\"name\":\"Startseite\",\"item\":\"https:\/\/sglux.de\/fr\/\"},{\"@type\":\"ListItem\",\"position\":2,\"name\":\"2023 - Towards Sic-Based VUV Pin-Photodiodes - Investigations on 4H-SiC Photodiodes with Shallow Implanted Al Emitters\"}]},{\"@type\":\"WebSite\",\"@id\":\"https:\/\/sglux.de\/fr\/#website\",\"url\":\"https:\/\/sglux.de\/fr\/\",\"name\":\"sglux\",\"description\":\"UV is our Business\",\"publisher\":{\"@id\":\"https:\/\/sglux.de\/fr\/#organization\"},\"potentialAction\":[{\"@type\":\"SearchAction\",\"target\":{\"@type\":\"EntryPoint\",\"urlTemplate\":\"https:\/\/sglux.de\/fr\/?s={search_term_string}\"},\"query-input\":{\"@type\":\"PropertyValueSpecification\",\"valueRequired\":true,\"valueName\":\"search_term_string\"}}],\"inLanguage\":\"fr-FR\"},{\"@type\":\"Organization\",\"@id\":\"https:\/\/sglux.de\/fr\/#organization\",\"name\":\"sglux GmbH\",\"url\":\"https:\/\/sglux.de\/fr\/\",\"logo\":{\"@type\":\"ImageObject\",\"inLanguage\":\"fr-FR\",\"@id\":\"https:\/\/sglux.de\/fr\/#\/schema\/logo\/image\/\",\"url\":\"https:\/\/sglux.de\/data-matrix\/uploads\/2024\/11\/sglux_logo_uv_senesoren_gelb.png\",\"contentUrl\":\"https:\/\/sglux.de\/data-matrix\/uploads\/2024\/11\/sglux_logo_uv_senesoren_gelb.png\",\"width\":550,\"height\":116,\"caption\":\"sglux GmbH\"},\"image\":{\"@id\":\"https:\/\/sglux.de\/fr\/#\/schema\/logo\/image\/\"},\"sameAs\":[\"https:\/\/www.linkedin.com\/company\/sglux-gmbh\"]},{\"@type\":\"Person\",\"@id\":\"https:\/\/sglux.de\/fr\/#\/schema\/person\/2b3b322bc60340429a282cd9253a76ad\",\"name\":\"sglux\"}]}<\/script>\n<!-- \/ Yoast SEO plugin. -->","yoast_head_json":{"title":"2023 - Towards Sic-Based VUV Pin-Photodiodes - Investigations on 4H-SiC Photodiodes with Shallow Implanted Al Emitters | sglux","robots":{"index":"index","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"canonical":"https:\/\/sglux.de\/fr\/2023-towards-sic-based-vuv-pin-photodiodes-investigations-on-4h-sic-photodiodes-with-shallow-implanted-al-emitters\/","og_locale":"fr_FR","og_type":"article","og_title":"2023 - Towards Sic-Based VUV Pin-Photodiodes - Investigations on 4H-SiC Photodiodes with Shallow Implanted Al Emitters | sglux","og_description":"Michael Schraml\u00b9, Alexander May\u00b9, Dr. Tobias Erlbacher\u00b9, Dr. Niklas Papathanasiou\u00b2, Dr. Tilman Weiss\u00b2, \u00b9Fraunhofer IISB, Erlangen, Germany \u00b2sglux GmbH, Berlin, Germany Towards SiC-Based VUV Pin-Photodiodes - Investigations on 4H-SiC Photodiodes with Shallow Implanted Al Emitters Zusammenfassung 4H silicon carbide (SiC) based pin photodiodes with a sensitivity in the vacuum ultraviolet spectrum (VUV) demand newly developed emitter doping profiles. This work features the first ever reported 4H-SiC pin photodiodes with an implanted p-emitter and a noticeable sensitivity at a wavelength of 200 nm. As a first step, Aluminum doping profiles produced by low energy ion implantation in 4H-SiC were characterized by secondary-ion mass spectrometry (SIMS). Photodiodes using these shallow emitters are compared to one with a deep p-emitter doping profile employing IV characteristics and the spectral response. SIMS results demonstrate the possibility of shallow Alimplantation profiles using low implantation energies with all emitter profiles featuring characteristic I-V results. For some shallow doping profiles, a meassurable signal at the upper limit of the VUV spectrum could be demonstrated, paving the way towards 4H-SiC pin photodiodes with sensitivities for wavelengths below 200 nm.","og_url":"https:\/\/sglux.de\/fr\/2023-towards-sic-based-vuv-pin-photodiodes-investigations-on-4h-sic-photodiodes-with-shallow-implanted-al-emitters\/","og_site_name":"sglux","article_published_time":"2023-06-11T12:45:27+00:00","article_modified_time":"2025-06-11T13:17:15+00:00","author":"sglux","twitter_card":"summary_large_image","twitter_misc":{"\u00c9crit par":"sglux","Dur\u00e9e de lecture estim\u00e9e":"1 minute"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"Article","@id":"https:\/\/sglux.de\/fr\/2023-towards-sic-based-vuv-pin-photodiodes-investigations-on-4h-sic-photodiodes-with-shallow-implanted-al-emitters\/#article","isPartOf":{"@id":"https:\/\/sglux.de\/fr\/2023-towards-sic-based-vuv-pin-photodiodes-investigations-on-4h-sic-photodiodes-with-shallow-implanted-al-emitters\/"},"author":{"name":"sglux","@id":"https:\/\/sglux.de\/fr\/#\/schema\/person\/2b3b322bc60340429a282cd9253a76ad"},"headline":"2023 – Towards Sic-Based VUV Pin-Photodiodes – Investigations on 4H-SiC Photodiodes with Shallow Implanted Al Emitters","datePublished":"2023-06-11T12:45:27+00:00","dateModified":"2025-06-11T13:17:15+00:00","mainEntityOfPage":{"@id":"https:\/\/sglux.de\/fr\/2023-towards-sic-based-vuv-pin-photodiodes-investigations-on-4h-sic-photodiodes-with-shallow-implanted-al-emitters\/"},"wordCount":193,"publisher":{"@id":"https:\/\/sglux.de\/fr\/#organization"},"keywords":["flame","irradiance_all","science","VUV"],"articleSection":["Recherche","Ver\u00f6ffentlichungen und Berichte"],"inLanguage":"fr-FR"},{"@type":"WebPage","@id":"https:\/\/sglux.de\/fr\/2023-towards-sic-based-vuv-pin-photodiodes-investigations-on-4h-sic-photodiodes-with-shallow-implanted-al-emitters\/","url":"https:\/\/sglux.de\/fr\/2023-towards-sic-based-vuv-pin-photodiodes-investigations-on-4h-sic-photodiodes-with-shallow-implanted-al-emitters\/","name":"2023 - Towards Sic-Based VUV Pin-Photodiodes - Investigations on 4H-SiC Photodiodes with Shallow Implanted Al Emitters | sglux","isPartOf":{"@id":"https:\/\/sglux.de\/fr\/#website"},"datePublished":"2023-06-11T12:45:27+00:00","dateModified":"2025-06-11T13:17:15+00:00","breadcrumb":{"@id":"https:\/\/sglux.de\/fr\/2023-towards-sic-based-vuv-pin-photodiodes-investigations-on-4h-sic-photodiodes-with-shallow-implanted-al-emitters\/#breadcrumb"},"inLanguage":"fr-FR","potentialAction":[{"@type":"ReadAction","target":["https:\/\/sglux.de\/fr\/2023-towards-sic-based-vuv-pin-photodiodes-investigations-on-4h-sic-photodiodes-with-shallow-implanted-al-emitters\/"]}]},{"@type":"BreadcrumbList","@id":"https:\/\/sglux.de\/fr\/2023-towards-sic-based-vuv-pin-photodiodes-investigations-on-4h-sic-photodiodes-with-shallow-implanted-al-emitters\/#breadcrumb","itemListElement":[{"@type":"ListItem","position":1,"name":"Startseite","item":"https:\/\/sglux.de\/fr\/"},{"@type":"ListItem","position":2,"name":"2023 - Towards Sic-Based VUV Pin-Photodiodes - Investigations on 4H-SiC Photodiodes with Shallow Implanted Al Emitters"}]},{"@type":"WebSite","@id":"https:\/\/sglux.de\/fr\/#website","url":"https:\/\/sglux.de\/fr\/","name":"sglux","description":"UV is our Business","publisher":{"@id":"https:\/\/sglux.de\/fr\/#organization"},"potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/sglux.de\/fr\/?s={search_term_string}"},"query-input":{"@type":"PropertyValueSpecification","valueRequired":true,"valueName":"search_term_string"}}],"inLanguage":"fr-FR"},{"@type":"Organization","@id":"https:\/\/sglux.de\/fr\/#organization","name":"sglux GmbH","url":"https:\/\/sglux.de\/fr\/","logo":{"@type":"ImageObject","inLanguage":"fr-FR","@id":"https:\/\/sglux.de\/fr\/#\/schema\/logo\/image\/","url":"https:\/\/sglux.de\/data-matrix\/uploads\/2024\/11\/sglux_logo_uv_senesoren_gelb.png","contentUrl":"https:\/\/sglux.de\/data-matrix\/uploads\/2024\/11\/sglux_logo_uv_senesoren_gelb.png","width":550,"height":116,"caption":"sglux GmbH"},"image":{"@id":"https:\/\/sglux.de\/fr\/#\/schema\/logo\/image\/"},"sameAs":["https:\/\/www.linkedin.com\/company\/sglux-gmbh"]},{"@type":"Person","@id":"https:\/\/sglux.de\/fr\/#\/schema\/person\/2b3b322bc60340429a282cd9253a76ad","name":"sglux"}]}},"_links":{"self":[{"href":"https:\/\/sglux.de\/fr\/wp-json\/wp\/v2\/posts\/10877","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/sglux.de\/fr\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/sglux.de\/fr\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/sglux.de\/fr\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/sglux.de\/fr\/wp-json\/wp\/v2\/comments?post=10877"}],"version-history":[{"count":1,"href":"https:\/\/sglux.de\/fr\/wp-json\/wp\/v2\/posts\/10877\/revisions"}],"predecessor-version":[{"id":10940,"href":"https:\/\/sglux.de\/fr\/wp-json\/wp\/v2\/posts\/10877\/revisions\/10940"}],"wp:attachment":[{"href":"https:\/\/sglux.de\/fr\/wp-json\/wp\/v2\/media?parent=10877"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/sglux.de\/fr\/wp-json\/wp\/v2\/categories?post=10877"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/sglux.de\/fr\/wp-json\/wp\/v2\/tags?post=10877"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}