{"id":10719,"date":"2005-06-06T11:29:11","date_gmt":"2005-06-06T09:29:11","guid":{"rendered":"https:\/\/sglux.de\/2005-electrical-transport-in-passivated-pt-tio2-ti-schottky-diodes\/"},"modified":"2025-06-11T14:27:40","modified_gmt":"2025-06-11T12:27:40","slug":"2005-electrical-transport-in-passivated-pt-tio2-ti-schottky-diodes","status":"publish","type":"post","link":"https:\/\/sglux.de\/fr\/2005-electrical-transport-in-passivated-pt-tio2-ti-schottky-diodes\/","title":{"rendered":"2005 &#8211; Electrical transport in passivated Pt\/TiO2\/Ti Schottky diodes"},"content":{"rendered":"<p>Th. Dittrich\u00b9, V. Zinchuk\u00b2, V. Skryshevsky\u00b2, I. Urban\u00b3, O. Hilt\u2074<br \/>\n\u00b9Hahn-Meitner-Institut, Berlin, Germany<br \/>\n\u00b2Department of Radiophysics, Taras Shevchenko University, Kyiv, Ukraine<br \/>\n\u00b3Bundesanstalt f\u00fcr Materialforschung, Berlin, Germany<br \/>\n\u2074sglux GmbH, Berlin, Germany<\/p>\n<p><strong><a href=\"http:\/\/scitation.aip.org\/content\/aip\/journal\/jap\/98\/10\/10.1063\/1.2135890\" target=\"_blank\" rel=\"noopener noreferrer\">JOURNAL OF APPLIED PHYSICS 98, 104501 (2005)<\/a><\/strong><\/p>\n<p><em>Abstract <\/em><br \/>\nPt\/TiO<sub>2<\/sub>\/Ti Schottky diodes were investigated by current-voltage analysis, photoresponse, and transient photocurrent(PC) in a wide temperature range. The compact TiO<sub>2<\/sub> as well as the SiO<sub>2<\/sub> passivation layers were prepared by the sol-gel technique. The Schottky-barrier height (1.2\u20131.3eV) was equal to the difference of the work functions of Pt and Ti. The temperature dependence of the ideality factor was interpreted in terms of a Gaussian distribution of barrier heights [J. H. Werner and H. H. G\u00fcttler, J. Appl. Phys.69, 1522 (1991)]. Space-charge-limited currents under the presence of defects with an exponential distribution were observed. Under zero-potential condition, the PC transients were practically independent of temperature and the electron drift mobility amounted to 2\u00d7 10E-4 cm\u00b2 (Vs)<br \/>\nA screening dipole layer at the Pt\/TiO<sub>2<\/sub> junction was formed under low forward and reverse potentials. Defects were generated under electron injection.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Th. Dittrich\u00b9, V. Zinchuk\u00b2, V. Skryshevsky\u00b2, I. Urban\u00b3, O. Hilt\u2074<br \/>\n\u00b9Hahn-Meitner-Institut, Berlin, Germany<br \/>\n\u00b2Department of Radiophysics, Taras Shevchenko University, Kyiv, Ukraine<br \/>\n\u00b3Bundesanstalt f\u00fcr Materialforschung, Berlin, Germany<br \/>\n\u2074sglux GmbH, Berlin, Germany<\/p>\n<p><strong><a href=\"http:\/\/scitation.aip.org\/content\/aip\/journal\/jap\/98\/10\/10.1063\/1.2135890\" target=\"_blank\" rel=\"noopener noreferrer\">JOURNAL OF APPLIED PHYSICS 98, 104501 (2005)<\/a><\/strong><\/p>\n<p><em>Abstract <\/em><br \/>\nPt\/TiO<sub>2<\/sub>\/Ti Schottky diodes were investigated by current-voltage analysis, photoresponse, and transient photocurrent(PC) in a wide temperature range. The compact TiO<sub>2<\/sub> as well as the SiO<sub>2<\/sub> passivation layers were prepared by the sol-gel technique. The Schottky-barrier height (1.2\u20131.3eV) was equal to the difference of the work functions of Pt and Ti. The temperature dependence of the ideality factor was interpreted in terms of a Gaussian distribution of barrier heights [J. H. Werner and H. H. G\u00fcttler, J. Appl. Phys.69, 1522 (1991)]. Space-charge-limited currents under the presence of defects with an exponential distribution were observed. Under zero-potential condition, the PC transients were practically independent of temperature and the electron drift mobility amounted to 2\u00d7 10E-4 cm\u00b2 (Vs)<br \/>\nA screening dipole layer at the Pt\/TiO<sub>2<\/sub> junction was formed under low forward and reverse potentials. Defects were generated under electron injection.<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"_genesis_hide_title":false,"_genesis_hide_breadcrumbs":false,"_genesis_hide_singular_image":false,"_genesis_hide_footer_widgets":false,"_genesis_custom_body_class":"","_genesis_custom_post_class":"","_genesis_layout":"","footnotes":""},"categories":[188,499],"tags":[],"class_list":{"0":"post-10719","1":"post","2":"type-post","3":"status-publish","4":"format-standard","6":"category-recherche-fr","7":"category-publications-fr","8":"entry"},"acf":[],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v26.6 - https:\/\/yoast.com\/wordpress\/plugins\/seo\/ -->\n<title>2005 - Electrical transport in passivated Pt\/TiO2\/Ti Schottky diodes | sglux<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/sglux.de\/fr\/2005-electrical-transport-in-passivated-pt-tio2-ti-schottky-diodes\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"2005 - Electrical transport in passivated Pt\/TiO2\/Ti Schottky diodes | sglux\" \/>\n<meta property=\"og:description\" content=\"Th. Dittrich\u00b9, V. Zinchuk\u00b2, V. Skryshevsky\u00b2, I. Urban\u00b3, O. Hilt\u2074 \u00b9Hahn-Meitner-Institut, Berlin, Germany \u00b2Department of Radiophysics, Taras Shevchenko University, Kyiv, Ukraine \u00b3Bundesanstalt f\u00fcr Materialforschung, Berlin, Germany \u2074sglux GmbH, Berlin, Germany  JOURNAL OF APPLIED PHYSICS 98, 104501 (2005)  Abstract  Pt\/TiO2\/Ti Schottky diodes were investigated by current-voltage analysis, photoresponse, and transient photocurrent(PC) in a wide temperature range. The compact TiO2 as well as the SiO2 passivation layers were prepared by the sol-gel technique. The Schottky-barrier height (1.2\u20131.3eV) was equal to the difference of the work functions of Pt and Ti. The temperature dependence of the ideality factor was interpreted in terms of a Gaussian distribution of barrier heights [J. H. Werner and H. H. G\u00fcttler, J. Appl. Phys.69, 1522 (1991)]. Space-charge-limited currents under the presence of defects with an exponential distribution were observed. Under zero-potential condition, the PC transients were practically independent of temperature and the electron drift mobility amounted to 2\u00d7 10E-4 cm\u00b2 (Vs) A screening dipole layer at the Pt\/TiO2 junction was formed under low forward and reverse potentials. Defects were generated under electron injection.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/sglux.de\/fr\/2005-electrical-transport-in-passivated-pt-tio2-ti-schottky-diodes\/\" \/>\n<meta property=\"og:site_name\" content=\"sglux\" \/>\n<meta property=\"article:published_time\" content=\"2005-06-06T09:29:11+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2025-06-11T12:27:40+00:00\" \/>\n<meta name=\"author\" content=\"sglux\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"\u00c9crit par\" \/>\n\t<meta name=\"twitter:data1\" content=\"sglux\" \/>\n\t<meta name=\"twitter:label2\" content=\"Dur\u00e9e de lecture estim\u00e9e\" \/>\n\t<meta name=\"twitter:data2\" content=\"1 minute\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\/\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\/\/sglux.de\/fr\/2005-electrical-transport-in-passivated-pt-tio2-ti-schottky-diodes\/#article\",\"isPartOf\":{\"@id\":\"https:\/\/sglux.de\/fr\/2005-electrical-transport-in-passivated-pt-tio2-ti-schottky-diodes\/\"},\"author\":{\"name\":\"sglux\",\"@id\":\"https:\/\/sglux.de\/fr\/#\/schema\/person\/2b3b322bc60340429a282cd9253a76ad\"},\"headline\":\"2005 &#8211; Electrical transport in passivated Pt\/TiO2\/Ti Schottky diodes\",\"datePublished\":\"2005-06-06T09:29:11+00:00\",\"dateModified\":\"2025-06-11T12:27:40+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\/\/sglux.de\/fr\/2005-electrical-transport-in-passivated-pt-tio2-ti-schottky-diodes\/\"},\"wordCount\":185,\"publisher\":{\"@id\":\"https:\/\/sglux.de\/fr\/#organization\"},\"articleSection\":[\"Recherche\",\"Ver\u00f6ffentlichungen und Berichte\"],\"inLanguage\":\"fr-FR\"},{\"@type\":\"WebPage\",\"@id\":\"https:\/\/sglux.de\/fr\/2005-electrical-transport-in-passivated-pt-tio2-ti-schottky-diodes\/\",\"url\":\"https:\/\/sglux.de\/fr\/2005-electrical-transport-in-passivated-pt-tio2-ti-schottky-diodes\/\",\"name\":\"2005 - Electrical transport in passivated Pt\/TiO2\/Ti Schottky diodes | sglux\",\"isPartOf\":{\"@id\":\"https:\/\/sglux.de\/fr\/#website\"},\"datePublished\":\"2005-06-06T09:29:11+00:00\",\"dateModified\":\"2025-06-11T12:27:40+00:00\",\"breadcrumb\":{\"@id\":\"https:\/\/sglux.de\/fr\/2005-electrical-transport-in-passivated-pt-tio2-ti-schottky-diodes\/#breadcrumb\"},\"inLanguage\":\"fr-FR\",\"potentialAction\":[{\"@type\":\"ReadAction\",\"target\":[\"https:\/\/sglux.de\/fr\/2005-electrical-transport-in-passivated-pt-tio2-ti-schottky-diodes\/\"]}]},{\"@type\":\"BreadcrumbList\",\"@id\":\"https:\/\/sglux.de\/fr\/2005-electrical-transport-in-passivated-pt-tio2-ti-schottky-diodes\/#breadcrumb\",\"itemListElement\":[{\"@type\":\"ListItem\",\"position\":1,\"name\":\"Startseite\",\"item\":\"https:\/\/sglux.de\/fr\/\"},{\"@type\":\"ListItem\",\"position\":2,\"name\":\"2005 - Electrical transport in passivated Pt\/TiO2\/Ti Schottky diodes\"}]},{\"@type\":\"WebSite\",\"@id\":\"https:\/\/sglux.de\/fr\/#website\",\"url\":\"https:\/\/sglux.de\/fr\/\",\"name\":\"sglux\",\"description\":\"UV is our Business\",\"publisher\":{\"@id\":\"https:\/\/sglux.de\/fr\/#organization\"},\"potentialAction\":[{\"@type\":\"SearchAction\",\"target\":{\"@type\":\"EntryPoint\",\"urlTemplate\":\"https:\/\/sglux.de\/fr\/?s={search_term_string}\"},\"query-input\":{\"@type\":\"PropertyValueSpecification\",\"valueRequired\":true,\"valueName\":\"search_term_string\"}}],\"inLanguage\":\"fr-FR\"},{\"@type\":\"Organization\",\"@id\":\"https:\/\/sglux.de\/fr\/#organization\",\"name\":\"sglux GmbH\",\"url\":\"https:\/\/sglux.de\/fr\/\",\"logo\":{\"@type\":\"ImageObject\",\"inLanguage\":\"fr-FR\",\"@id\":\"https:\/\/sglux.de\/fr\/#\/schema\/logo\/image\/\",\"url\":\"https:\/\/sglux.de\/data-matrix\/uploads\/2024\/11\/sglux_logo_uv_senesoren_gelb.png\",\"contentUrl\":\"https:\/\/sglux.de\/data-matrix\/uploads\/2024\/11\/sglux_logo_uv_senesoren_gelb.png\",\"width\":550,\"height\":116,\"caption\":\"sglux GmbH\"},\"image\":{\"@id\":\"https:\/\/sglux.de\/fr\/#\/schema\/logo\/image\/\"},\"sameAs\":[\"https:\/\/www.linkedin.com\/company\/sglux-gmbh\"]},{\"@type\":\"Person\",\"@id\":\"https:\/\/sglux.de\/fr\/#\/schema\/person\/2b3b322bc60340429a282cd9253a76ad\",\"name\":\"sglux\"}]}<\/script>\n<!-- \/ Yoast SEO plugin. -->","yoast_head_json":{"title":"2005 - Electrical transport in passivated Pt\/TiO2\/Ti Schottky diodes | sglux","robots":{"index":"index","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"canonical":"https:\/\/sglux.de\/fr\/2005-electrical-transport-in-passivated-pt-tio2-ti-schottky-diodes\/","og_locale":"fr_FR","og_type":"article","og_title":"2005 - Electrical transport in passivated Pt\/TiO2\/Ti Schottky diodes | sglux","og_description":"Th. Dittrich\u00b9, V. Zinchuk\u00b2, V. Skryshevsky\u00b2, I. Urban\u00b3, O. Hilt\u2074 \u00b9Hahn-Meitner-Institut, Berlin, Germany \u00b2Department of Radiophysics, Taras Shevchenko University, Kyiv, Ukraine \u00b3Bundesanstalt f\u00fcr Materialforschung, Berlin, Germany \u2074sglux GmbH, Berlin, Germany  JOURNAL OF APPLIED PHYSICS 98, 104501 (2005)  Abstract  Pt\/TiO2\/Ti Schottky diodes were investigated by current-voltage analysis, photoresponse, and transient photocurrent(PC) in a wide temperature range. The compact TiO2 as well as the SiO2 passivation layers were prepared by the sol-gel technique. The Schottky-barrier height (1.2\u20131.3eV) was equal to the difference of the work functions of Pt and Ti. The temperature dependence of the ideality factor was interpreted in terms of a Gaussian distribution of barrier heights [J. H. Werner and H. H. G\u00fcttler, J. Appl. Phys.69, 1522 (1991)]. 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