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2012 – Highly reliable Silicon Carbide photodiodes for visible-blind ultraviolet detector applications

von

D. Prasai¹, W. John¹, L. Weixelbaum¹, O. Krueger¹, G. Wagner², P. Sperfeld³, S. Nowy³, D. Friedrich³, S. Winter³ and T. Weiss⁴,
¹Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Berlin, Germany, ²Leibniz-Institut fuer Kristallzuechtung, Berlin, Germany, ³Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), 4.1 Photometry and Applied Radiometry, Braunschweig, Germany, ⁴sglux GmbH, Berlin, Germany

J. Mater. Res., first view (2012).

Abstract
Highly efficient polytype 4H silicon carbide (4H-SiC) p–n diodes for ultraviolet (UV) light detection have been fabricated, characterized, and exposed to high-intensity mercury lamp irradiation (up to 17 mW/cm²). The behavior of the photocurrent response under UV light irradiation using a low-pressure mercury UV-C lamp (4 mW/cm²) and a medium-pressure mercury discharge lamp (17 mW/cm²) has been studied. We report on long-term UV photoaging tests performed for up to 22 mo. Results demonstrate the robustness of SiC photodiodes against UV radiation. The devices under test showed an initial burn-in effect, i.e., the photocurrent response dropped by less than 5% within the first 40 h of artificial UV aging. Such burn-in effect under UV stress was also observed for previously available polytype 6H silicon carbide (6H–SiC) p–n photodetectors. After burn-in, no measurable degradation has been detected, which makes the devices excellent candidates for high irradiance UV detector applications.

2010-2012 – Development and setting up of a calibration facility for UV sensors at high irradiation rates

von

Partner: Physikalisch-Technische Bundesanstalt in Braunschweig und Berlin (PTB) und sglux GmbH
period: 2010 – 2012
acknowledgements: BMWi ZIM 2194602RR9

Abstract
Processes like UV water purification or UV hardening require high intensity UV radiation where a traceable calibration did not exist. German sglux GmbH together with PTB (Physikalisch-Technische Bundesanstalt, German national metrology institute) developed the world’s first traceable calibration standard for high irradiation level, in particular for UV water purification sensor calibration

Veröffentlichungen
B. Barton¹, P. Sperfeld¹, A. Towara¹, G. Hopfenmueller²,
¹Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), 4.1 Photometry and Applied Radiometry, Braunschweig, Germany, ²sglux GmbH, Berlin, Germany
« Developing and setting up a calibration facility for UV sensors at high irradiance rates »
EMEA Regional Conference, Karlsruhe, Germany (2013)

P. Sperfeld¹, B. Barton¹, S. Pape¹, G. Hopfenmueller²,
¹Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), 4.1 Photometry and Applied Radiometry, Braunschweig, Germany, ²sglux GmbH, Berlin, Germany
« Traceable spectral irradiance measurements at UV water disinfection facilities »
EMEA Regional Conference, Karlsruhe, Germany (2013)

G. Hopfenmueller¹, T. Weiss¹, B. Barton², P. Sperfeld², S. Nowy², S. Pape², D. Friedrich², S. Winter², A. Towara², A. Hoepe², S. Teichert²,
¹sglux GmbH, Berlin, Germany, ²Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), 4.1 Photometry and Applied Radiometry, Braunschweig, Germany
« PTB traceable calibrated reference UV radiometer for measurements at high irradiance medium pressure mercury discharge lamps »
EMEA Regional Conference, Karlsruhe, Germany (2013)

P. Sperfeld¹, B. Barton¹, S. Pape¹, A. Towara¹, J. Eggers², G. Hopfenmueller³,
¹Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), Germany, ²DVGW-Technologiezentrum Wasser, Karlsruhe, Germany, ³sglux GmbH, Berlin, Germany
« Spectral irradiance measurement and actinic radiometer calibration for UV water disinfection »
Metrologia, issue 51 (2014), S. 282-288.

P. Sperfeld¹, B. Barton¹, S. Pape¹, A. Towara¹, J. Eggers², G. Hopfenmueller³,
¹Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), Germany, ²DVGW-Technologiezentrum Wasser, Karlsruhe, Germany, ³sglux GmbH, Berlin, Germany
« Spectral Irradiance Measurement and Actinic Radiometer Calibration for UV Water Disinfection »
Proceedings of NEWRAD 2014, edited by S. Park, P. Kaerhae and E. Ikonen. (Aalto University, Espoo, Finland 2014) p. 128.

2011 – Characterisation of SiC photodiodes for high irradiance UV radiometers

von

S. Nowy¹, B. Barton¹, S. Pape¹, P. Sperfeld¹, D. Friedrich¹, S. Winter¹, G. Hopfenmueller², and T. Weiss²,
¹Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), 4.1 Photometry and Applied Radiometry, Braunschweig, Germany, ²sglux GmbH, Berlin, Germany

Proceedings of NEWRAD2011, edited by S. Park and E. Ikonen. (Aalto University, Espoo, Finland, 2011) p. 203.

Abstract
For monitoring high UV irradiance, silicon carbide (SiC) based photodiodes are used. In this paper we describe the characterization of the novel SiC UV photodiodes in terms of their spectral and integral responsivity. Special attention is paid to the aging behavior of the photodiodes due to high UV irradiance. Artificial aging of the samples is performed by illumination with a high power medium pressure mercury discharge lamp.

2011 – Characterisation of new optical diffusers used in high irradiance UV radiometers

von

Barton¹, B., Sperfeld¹, P., Nowy¹, S., Towara¹, A., Hoepe¹, A., Teichert¹, S., Hopfenmueller², G., Baer³, M. and Kreuzberger³, T.
¹Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), 4.1 Photometry and Applied Radiometry, Braunschweig, Germany, ²sglux GmbH, Berlin, Germany, ³SGIL Silicaglas GmbH, Langewiesen, Germany

Proceedings of NEWRAD2011, edited by S. Park and E. Ikonen. (Aalto University, Espoo, Finland, 2011) p. 278.

Abstract
Diffusers are essential components of UV radiometers used as transfer standards. They improve the insensitivity to differing radiation situations. In combination with a beam limiting aperture, a diffuser defines the irradiated area [1]. A detailed study of different properties of UV diffusers is shown.

2011 – Characterisation of new optical diffusers used in high irradiance UV radiometers

von

Partner: Physikalisch-Technische Bundesanstalt in Braunschweig und Berlin (PTB) und sglux GmbH
period: 2011
acknowledgements: BMWi ZIM 2194602RR9

Abstract
A detailed study of different properties of UV diffusers was performed. Diffusers are essential components of UV radiometers used as transfer standards. They improve the insensitivity to differing radiation situations.

Publications
Barton¹, B., Sperfeld¹, P., Nowy¹, S., Towara¹, A., Hoepe¹, A., Teichert¹, S., Hopfenmueller², G., Baer³, M. and Kreuzberger³, T.
¹Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), 4.1 Photometry and Applied Radiometry, Braunschweig, Germany, ²sglux GmbH, Berlin, Germany, ³SGIL Silicaglas GmbH, Langewiesen, Germany

« Characterisation of new optical diffusers used in high irradiance UV radiometers »
Proceedings of NEWRAD2011, edited by S. Park and E. Ikonen. (Aalto University, Espoo, Finland, 2011) p. 278.

2011 – Characterisation of SiC photodiodes for high irradiance UV radiometers

von

Partner: Physikalisch-Technische Bundesanstalt in Braunschweig und Berlin (PTB) und sglux GmbH
period: 2011
acknowledgements: BMWi ZIM 2194602RR9

Abstract
For monitoring high UV irradiance, silicon carbide (SiC) based photodiodes are used. This project characterized novel SiC UV photodiodes in terms of their spectral and integral responsivity. Special attention was paid to the aging behavior of the photodiodes due to high UV irradiance. Artificial aging of the samples were performed by illumination with a high power medium pressure mercury discharge lamp. After burn in no degradation could be measured.

Publications
S. Nowy¹, B. Barton¹, S. Pape¹, P. Sperfeld¹, D. Friedrich¹, S. Winter¹, G. Hopfenmueller², T. Weiss²,
¹Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), 4.1 Photometry and Applied Radiometry, Braunschweig, Germany, ²sglux GmbH, Berlin, Germany

« Characterisation of SiC photodiodes for high irradiance UV radiometers »
Proceedings of NEWRAD2011, edited by S. Park and E. Ikonen. (Aalto University, Espoo, Finland, 2011) p. 203.

2008-2010 – Development of a SiC photodiode wafer production process

von

Partner: Leibniz Ferdinand Braun Institut für Höchstfrequenztechnik (FBH), Leibniz Institut für Kristallzüchtung (IKZ), sglux GmbH
period: 2008- 2010
acknowledgements: BMWi ZIM 2194601DB9

Abstract
Highly efficient polytype 4H silicon carbide (4H-SiC) p–n diodes for ultraviolet (UV) light detection have been fabricated, characterized, and exposed to high-intensity mercury lamp irradiation (up to 17 mW/cm²). The behavior of the photocurrent response under UV light irradiation using a low-pressure mercury UV-C lamp (4 mW/cm²) and a medium-pressure mercury discharge lamp (17 mW/cm²) has been studied. Long-term UV photoaging tests had been performed for up to 22 months. Results demonstrate the robustness of SiC photodiodes against UV radiation. The devices under test showed an initial burn-in effect, i.e., the photocurrent response dropped by less than 5% within the first 40 h of artificial UV aging. Such burn-in effect under UV stress was also observed for previously available polytype 6H silicon carbide (6H–SiC) p–n photodetectors. After burn-in, no measurable degradation has been detected, which makes the devices excellent candidates for high irradiance UV detector applications.

Publications
D. Prasai¹, W. John¹, L. Weixelbaum¹, O. Krueger¹, G. Wagner², P. Sperfeld³, S. Nowy³, D. Friedrich³, S. Winter³ and T. Weiss⁴,
¹Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Berlin, Germany, ²Leibniz-Institut fuer Kristallzuechtung, Berlin, Germany, ³Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), 4.1 Photometry and Applied Radiometry, Braunschweig, Germany, ⁴sglux GmbH, Berlin, Germany

« Highly reliable Silicon Carbide photodiodes for visible-blind ultraviolet detector applications »
J. Mater. Res., first view (2012).

2009 – Electronic and photoelectrical properties of semiconducting titanium dioxide layers

von

C. Nitschke
Beuth Hochschule für Technik, Master Thesis, 2009

Master thesis 2009

Abstract
In the present thesis electronic and photoelectrical properties of semiconducting titanium dioxide layers were measured using different measuring methods. The titanium dioxide layers had been produced using the sol-gel-process with different precursor solutions. The findings and insights gained shall be used to manipulate the structure and functionality of UV-photodiodes with titanium-dioxide-layers. Traps had been proven both by the analysis of the spectral resolution of the photocurrent and thermally stimulated luminescence. These traps are affected by the titanium dioxide-layer manufacturing process. Using the impedance spectroscopy, the UV-photodiodes inner structure, the width of the space charge layer and the electrical conduction of the titanium dioxide-layer grains and grain boundaries could be measured. Between the impedance of the UV-photodiodes and the speed of reaction a correlation could be noticed. Additionally voltage dependent current and capacity measurements had been carried out as well as thermally stimulated currents had been measured.

2008-2009 – Electronic and photoelectrical properties of semiconducting titanium dioxide layers

von

Partner: Technische Hochschule Wildau, sglux GmbH
period: 2008-2009
acknowledgements: BMBF 13N9586

Abstract
Electronic and photoelectrical properties of semiconducting titanium dioxide layers had been investigated and improved.

Publication
C. Nitschke
« Electronic and photoelectrical properties of semiconducting titanium dioxide layers »
Beuth Hochschule für Technik, Master Thesis, 2009

2005 – Electrical transport in passivated Pt/TiO2/Ti Schottky diodes

von

Th. Dittrich¹, V. Zinchuk², V. Skryshevsky², I. Urban³, O. Hilt⁴
¹Hahn-Meitner-Institut, Berlin, Germany
²Department of Radiophysics, Taras Shevchenko University, Kyiv, Ukraine
³Bundesanstalt für Materialforschung, Berlin, Germany
⁴sglux GmbH, Berlin, Germany

JOURNAL OF APPLIED PHYSICS 98, 104501 (2005)

Abstract
Pt/TiO2/Ti Schottky diodes were investigated by current-voltage analysis, photoresponse, and transient photocurrent(PC) in a wide temperature range. The compact TiO2 as well as the SiO2 passivation layers were prepared by the sol-gel technique. The Schottky-barrier height (1.2–1.3eV) was equal to the difference of the work functions of Pt and Ti. The temperature dependence of the ideality factor was interpreted in terms of a Gaussian distribution of barrier heights [J. H. Werner and H. H. Güttler, J. Appl. Phys.69, 1522 (1991)]. Space-charge-limited currents under the presence of defects with an exponential distribution were observed. Under zero-potential condition, the PC transients were practically independent of temperature and the electron drift mobility amounted to 2× 10E-4 cm² (Vs)
A screening dipole layer at the Pt/TiO2 junction was formed under low forward and reverse potentials. Defects were generated under electron injection.