Partner: Physikalisch-Technische Bundesanstalt in Braunschweig und Berlin (PTB) und sglux GmbH
Zeitraum: 2011
Förderkennzeichen: BMWi ZIM 2194602RR9
Abstract
For monitoring high UV irradiance, silicon carbide (SiC) based photodiodes are used. This project characterized novel SiC UV photodiodes in terms of their spectral and integral responsivity. Special attention was paid to the aging behavior of the photodiodes due to high UV irradiance. Artificial aging of the samples were performed by illumination with a high power medium pressure mercury discharge lamp. After burn in no degradation could be measured.
Veröffentlichungen
S. Nowy¹, B. Barton¹, S. Pape¹, P. Sperfeld¹, D. Friedrich¹, S. Winter¹, G. Hopfenmueller², T. Weiss²,
¹Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), 4.1 Photometry and Applied Radiometry, Braunschweig, Germany, ²sglux GmbH, Berlin, Germany
« Characterisation of SiC photodiodes for high irradiance UV radiometers »
Proceedings of NEWRAD2011, edited by S. Park and E. Ikonen. (Aalto University, Espoo, Finland, 2011) p. 203.