{"id":11017,"date":"2010-06-11T15:22:49","date_gmt":"2010-06-11T13:22:49","guid":{"rendered":"https:\/\/sglux.de\/2008-2010-development-of-a-sic-photodiode-wafer-production-process\/"},"modified":"2025-06-11T15:23:25","modified_gmt":"2025-06-11T13:23:25","slug":"2008-2010-development-of-a-sic-photodiode-wafer-production-process","status":"publish","type":"post","link":"https:\/\/sglux.de\/es\/2008-2010-development-of-a-sic-photodiode-wafer-production-process\/","title":{"rendered":"2008-2010 &#8211; Development of a SiC photodiode wafer production process"},"content":{"rendered":"<p>Partner: Leibniz Ferdinand Braun Institut f\u00fcr H\u00f6chstfrequenztechnik (FBH), Leibniz Institut f\u00fcr Kristallz\u00fcchtung (IKZ), sglux GmbH<br \/>\nperiod: 2008- 2010<br \/>\nacknowledgements: BMWi ZIM 2194601DB9<\/p>\n<p><em>Abstract<\/em><br \/>\nHighly efficient polytype 4H silicon carbide (4H-SiC) p\u2013n diodes for ultraviolet (UV) light detection have been fabricated, characterized, and exposed to high-intensity mercury lamp irradiation (up to 17 mW\/cm\u00b2). The behavior of the photocurrent response under UV light irradiation using a low-pressure mercury UV-C lamp (4 mW\/cm\u00b2) and a medium-pressure mercury discharge lamp (17 mW\/cm\u00b2) has been studied. Long-term UV photoaging tests had been performed for up to 22 months. Results demonstrate the robustness of SiC photodiodes against UV radiation. The devices under test showed an initial burn-in effect, i.e., the photocurrent response dropped by less than 5% within the first 40 h of artificial UV aging. Such burn-in effect under UV stress was also observed for previously available polytype 6H silicon carbide (6H\u2013SiC) p\u2013n photodetectors. After burn-in, no measurable degradation has been detected, which makes the devices excellent candidates for high irradiance UV detector applications.<\/p>\n<p><em>Publications<\/em><br \/>\nD. Prasai\u00b9, W. John\u00b9, L. Weixelbaum\u00b9, O. Krueger\u00b9, G. Wagner\u00b2, P. Sperfeld\u00b3, S. Nowy\u00b3, D. Friedrich\u00b3, S. Winter\u00b3 and T. Weiss\u2074,<br \/>\n\u00b9Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Berlin, Germany, \u00b2Leibniz-Institut fuer Kristallzuechtung, Berlin, Germany, \u00b3Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), 4.1 Photometry and Applied Radiometry, Braunschweig, Germany, \u2074sglux GmbH, Berlin, Germany<\/p>\n<p>\u00abHighly reliable Silicon Carbide photodiodes for visible-blind ultraviolet detector applications\u00bb<br \/>\nJ. Mater. Res., first view (2012).<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Partner: Leibniz Ferdinand Braun Institut f\u00fcr H\u00f6chstfrequenztechnik (FBH), Leibniz Institut f\u00fcr Kristallz\u00fcchtung (IKZ), sglux GmbH<br \/>\nperiod: 2008- 2010<br \/>\nacknowledgements: BMWi ZIM 2194601DB9<\/p>\n<p><em>Abstract<\/em><br \/>\nHighly efficient polytype 4H silicon carbide (4H-SiC) p\u2013n diodes for ultraviolet (UV) light detection have been fabricated, characterized, and exposed to high-intensity mercury lamp irradiation (up to 17 mW\/cm\u00b2). The behavior of the photocurrent response under UV light irradiation using a low-pressure mercury UV-C lamp (4 mW\/cm\u00b2) and a medium-pressure mercury discharge lamp (17 mW\/cm\u00b2) has been studied. Long-term UV photoaging tests had been performed for up to 22 months. Results demonstrate the robustness of SiC photodiodes against UV radiation. The devices under test showed an initial burn-in effect, i.e., the photocurrent response dropped by less than 5% within the first 40 h of artificial UV aging. Such burn-in effect under UV stress was also observed for previously available polytype 6H silicon carbide (6H\u2013SiC) p\u2013n photodetectors. After burn-in, no measurable degradation has been detected, which makes the devices excellent candidates for high irradiance UV detector applications.<\/p>\n<p><em>Publications<\/em><br \/>\nD. Prasai\u00b9, W. John\u00b9, L. Weixelbaum\u00b9, O. Krueger\u00b9, G. Wagner\u00b2, P. Sperfeld\u00b3, S. Nowy\u00b3, D. Friedrich\u00b3, S. Winter\u00b3 and T. Weiss\u2074,<br \/>\n\u00b9Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Berlin, Germany, \u00b2Leibniz-Institut fuer Kristallzuechtung, Berlin, Germany, \u00b3Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), 4.1 Photometry and Applied Radiometry, Braunschweig, Germany, \u2074sglux GmbH, Berlin, Germany<\/p>\n<p>\u00abHighly reliable Silicon Carbide photodiodes for visible-blind ultraviolet detector applications\u00bb<br \/>\nJ. Mater. Res., first view (2012).<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"_genesis_hide_title":false,"_genesis_hide_breadcrumbs":false,"_genesis_hide_singular_image":false,"_genesis_hide_footer_widgets":false,"_genesis_custom_body_class":"","_genesis_custom_post_class":"","_genesis_layout":"","footnotes":""},"categories":[524,189],"tags":[],"class_list":{"0":"post-11017","1":"post","2":"type-post","3":"status-publish","4":"format-standard","6":"category-abgeschlossene-arbeiten-es","7":"category-investigacion-es","8":"entry"},"acf":[],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v26.6 - https:\/\/yoast.com\/wordpress\/plugins\/seo\/ -->\n<title>2008-2010 - Development of a SiC photodiode wafer production process | sglux<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/sglux.de\/es\/2008-2010-development-of-a-sic-photodiode-wafer-production-process\/\" \/>\n<meta property=\"og:locale\" content=\"es_ES\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"2008-2010 - Development of a SiC photodiode wafer production process | sglux\" \/>\n<meta property=\"og:description\" content=\"Partner: Leibniz Ferdinand Braun Institut f\u00fcr H\u00f6chstfrequenztechnik (FBH), Leibniz Institut f\u00fcr Kristallz\u00fcchtung (IKZ), sglux GmbH period: 2008- 2010 acknowledgements: BMWi ZIM 2194601DB9  Abstract Highly efficient polytype 4H silicon carbide (4H-SiC) p\u2013n diodes for ultraviolet (UV) light detection have been fabricated, characterized, and exposed to high-intensity mercury lamp irradiation (up to 17 mW\/cm\u00b2). The behavior of the photocurrent response under UV light irradiation using a low-pressure mercury UV-C lamp (4 mW\/cm\u00b2) and a medium-pressure mercury discharge lamp (17 mW\/cm\u00b2) has been studied. Long-term UV photoaging tests had been performed for up to 22 months. Results demonstrate the robustness of SiC photodiodes against UV radiation. The devices under test showed an initial burn-in effect, i.e., the photocurrent response dropped by less than 5% within the first 40 h of artificial UV aging. Such burn-in effect under UV stress was also observed for previously available polytype 6H silicon carbide (6H\u2013SiC) p\u2013n photodetectors. After burn-in, no measurable degradation has been detected, which makes the devices excellent candidates for high irradiance UV detector applications.  Publications D. Prasai\u00b9, W. John\u00b9, L. Weixelbaum\u00b9, O. Krueger\u00b9, G. Wagner\u00b2, P. Sperfeld\u00b3, S. Nowy\u00b3, D. Friedrich\u00b3, S. Winter\u00b3 and T. Weiss\u2074, \u00b9Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Berlin, Germany, \u00b2Leibniz-Institut fuer Kristallzuechtung, Berlin, Germany, \u00b3Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), 4.1 Photometry and Applied Radiometry, Braunschweig, Germany, \u2074sglux GmbH, Berlin, Germany  &quot;Highly reliable Silicon Carbide photodiodes for visible-blind ultraviolet detector applications&quot; J. Mater. 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The behavior of the photocurrent response under UV light irradiation using a low-pressure mercury UV-C lamp (4 mW\/cm\u00b2) and a medium-pressure mercury discharge lamp (17 mW\/cm\u00b2) has been studied. Long-term UV photoaging tests had been performed for up to 22 months. Results demonstrate the robustness of SiC photodiodes against UV radiation. The devices under test showed an initial burn-in effect, i.e., the photocurrent response dropped by less than 5% within the first 40 h of artificial UV aging. Such burn-in effect under UV stress was also observed for previously available polytype 6H silicon carbide (6H\u2013SiC) p\u2013n photodetectors. After burn-in, no measurable degradation has been detected, which makes the devices excellent candidates for high irradiance UV detector applications.  Publications D. Prasai\u00b9, W. John\u00b9, L. Weixelbaum\u00b9, O. Krueger\u00b9, G. Wagner\u00b2, P. Sperfeld\u00b3, S. Nowy\u00b3, D. Friedrich\u00b3, S. Winter\u00b3 and T. Weiss\u2074, \u00b9Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Berlin, Germany, \u00b2Leibniz-Institut fuer Kristallzuechtung, Berlin, Germany, \u00b3Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), 4.1 Photometry and Applied Radiometry, Braunschweig, Germany, \u2074sglux GmbH, Berlin, Germany  \"Highly reliable Silicon Carbide photodiodes for visible-blind ultraviolet detector applications\" J. Mater. Res., first view (2012).","og_url":"https:\/\/sglux.de\/es\/2008-2010-development-of-a-sic-photodiode-wafer-production-process\/","og_site_name":"sglux","article_published_time":"2010-06-11T13:22:49+00:00","article_modified_time":"2025-06-11T13:23:25+00:00","author":"sglux","twitter_card":"summary_large_image","twitter_misc":{"Escrito por":"sglux","Tiempo de lectura":"1 minuto"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"Article","@id":"https:\/\/sglux.de\/es\/2008-2010-development-of-a-sic-photodiode-wafer-production-process\/#article","isPartOf":{"@id":"https:\/\/sglux.de\/es\/2008-2010-development-of-a-sic-photodiode-wafer-production-process\/"},"author":{"name":"sglux","@id":"https:\/\/sglux.de\/es\/#\/schema\/person\/2b3b322bc60340429a282cd9253a76ad"},"headline":"2008-2010 &#8211; Development of a SiC photodiode wafer production process","datePublished":"2010-06-11T13:22:49+00:00","dateModified":"2025-06-11T13:23:25+00:00","mainEntityOfPage":{"@id":"https:\/\/sglux.de\/es\/2008-2010-development-of-a-sic-photodiode-wafer-production-process\/"},"wordCount":247,"publisher":{"@id":"https:\/\/sglux.de\/es\/#organization"},"articleSection":["abgeschlossene Arbeiten","Investigaci\u00f3n"],"inLanguage":"es"},{"@type":"WebPage","@id":"https:\/\/sglux.de\/es\/2008-2010-development-of-a-sic-photodiode-wafer-production-process\/","url":"https:\/\/sglux.de\/es\/2008-2010-development-of-a-sic-photodiode-wafer-production-process\/","name":"2008-2010 - Development of a SiC photodiode wafer production process | sglux","isPartOf":{"@id":"https:\/\/sglux.de\/es\/#website"},"datePublished":"2010-06-11T13:22:49+00:00","dateModified":"2025-06-11T13:23:25+00:00","breadcrumb":{"@id":"https:\/\/sglux.de\/es\/2008-2010-development-of-a-sic-photodiode-wafer-production-process\/#breadcrumb"},"inLanguage":"es","potentialAction":[{"@type":"ReadAction","target":["https:\/\/sglux.de\/es\/2008-2010-development-of-a-sic-photodiode-wafer-production-process\/"]}]},{"@type":"BreadcrumbList","@id":"https:\/\/sglux.de\/es\/2008-2010-development-of-a-sic-photodiode-wafer-production-process\/#breadcrumb","itemListElement":[{"@type":"ListItem","position":1,"name":"Startseite","item":"https:\/\/sglux.de\/es\/"},{"@type":"ListItem","position":2,"name":"2008-2010 - Development of a SiC photodiode wafer production process"}]},{"@type":"WebSite","@id":"https:\/\/sglux.de\/es\/#website","url":"https:\/\/sglux.de\/es\/","name":"sglux","description":"UV is our Business","publisher":{"@id":"https:\/\/sglux.de\/es\/#organization"},"potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/sglux.de\/es\/?s={search_term_string}"},"query-input":{"@type":"PropertyValueSpecification","valueRequired":true,"valueName":"search_term_string"}}],"inLanguage":"es"},{"@type":"Organization","@id":"https:\/\/sglux.de\/es\/#organization","name":"sglux GmbH","url":"https:\/\/sglux.de\/es\/","logo":{"@type":"ImageObject","inLanguage":"es","@id":"https:\/\/sglux.de\/es\/#\/schema\/logo\/image\/","url":"https:\/\/sglux.de\/data-matrix\/uploads\/2024\/11\/sglux_logo_uv_senesoren_gelb.png","contentUrl":"https:\/\/sglux.de\/data-matrix\/uploads\/2024\/11\/sglux_logo_uv_senesoren_gelb.png","width":550,"height":116,"caption":"sglux GmbH"},"image":{"@id":"https:\/\/sglux.de\/es\/#\/schema\/logo\/image\/"},"sameAs":["https:\/\/www.linkedin.com\/company\/sglux-gmbh"]},{"@type":"Person","@id":"https:\/\/sglux.de\/es\/#\/schema\/person\/2b3b322bc60340429a282cd9253a76ad","name":"sglux"}]}},"_links":{"self":[{"href":"https:\/\/sglux.de\/es\/wp-json\/wp\/v2\/posts\/11017","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/sglux.de\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/sglux.de\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/sglux.de\/es\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/sglux.de\/es\/wp-json\/wp\/v2\/comments?post=11017"}],"version-history":[{"count":1,"href":"https:\/\/sglux.de\/es\/wp-json\/wp\/v2\/posts\/11017\/revisions"}],"predecessor-version":[{"id":11020,"href":"https:\/\/sglux.de\/es\/wp-json\/wp\/v2\/posts\/11017\/revisions\/11020"}],"wp:attachment":[{"href":"https:\/\/sglux.de\/es\/wp-json\/wp\/v2\/media?parent=11017"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/sglux.de\/es\/wp-json\/wp\/v2\/categories?post=11017"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/sglux.de\/es\/wp-json\/wp\/v2\/tags?post=11017"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}