Proceedings of NEWRAD2011, edited by S. Park and E. Ikonen. (Aalto University, Espoo, Finland, 2011) p. 203.<\/a><\/strong><\/p>\nAbstract <\/em>
\nFor monitoring high UV irradiance, silicon carbide (SiC) based photodiodes are used. In this paper we describe the characterization of the novel SiC UV photodiodes in terms of their spectral and integral responsivity. Special attention is paid to the aging behavior of the photodiodes due to high UV irradiance. Artificial aging of the samples is performed by illumination with a high power medium pressure mercury discharge lamp.<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"_genesis_hide_title":false,"_genesis_hide_breadcrumbs":false,"_genesis_hide_singular_image":false,"_genesis_hide_footer_widgets":false,"_genesis_custom_body_class":"","_genesis_custom_post_class":"","_genesis_layout":"","footnotes":""},"categories":[189,500],"tags":[561,546,550],"class_list":{"0":"post-10931","1":"post","2":"type-post","3":"status-publish","4":"format-standard","6":"category-investigacion-es","7":"category-publications-es","8":"tag-irradiance_hi-es","9":"tag-photodiodes-es","10":"tag-science-es","11":"entry"},"acf":[],"yoast_head":"\n2011 - Characterisation of SiC photodiodes for high irradiance UV radiometers | sglux<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/sglux.de\/es\/2011-characterisation-of-sic-photodiodes-for-high-irradiance-uv-radiometers\/\" \/>\n<meta property=\"og:locale\" content=\"es_ES\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"2011 - Characterisation of SiC photodiodes for high irradiance UV radiometers | sglux\" \/>\n<meta property=\"og:description\" content=\"S. Nowy\u00b9, B. Barton\u00b9, S. Pape\u00b9, P. Sperfeld\u00b9, D. Friedrich\u00b9, S. Winter\u00b9, G. Hopfenmueller\u00b2, and T. Weiss\u00b2, \u00b9Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), 4.1 Photometry and Applied Radiometry, Braunschweig, Germany, \u00b2sglux GmbH, Berlin, Germany Proceedings of NEWRAD2011, edited by S. Park and E. Ikonen. (Aalto University, Espoo, Finland, 2011) p. 203. Abstract For monitoring high UV irradiance, silicon carbide (SiC) based photodiodes are used. In this paper we describe the characterization of the novel SiC UV photodiodes in terms of their spectral and integral responsivity. Special attention is paid to the aging behavior of the photodiodes due to high UV irradiance. 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