{"id":10292,"date":"2011-05-23T09:20:34","date_gmt":"2011-05-23T07:20:34","guid":{"rendered":"https:\/\/sglux.de\/?p=10292"},"modified":"2025-06-10T09:17:53","modified_gmt":"2025-06-10T07:17:53","slug":"2011-characterisation-of-sic-photodiodes-for-high-irradiance-uv-radiometers-2","status":"publish","type":"post","link":"https:\/\/sglux.de\/en\/2011-characterisation-of-sic-photodiodes-for-high-irradiance-uv-radiometers-2\/","title":{"rendered":"2011 &#8211; Characterisation of SiC photodiodes for high irradiance UV radiometers"},"content":{"rendered":"<p>Partner: Physikalisch-Technische Bundesanstalt in Braunschweig und Berlin (PTB) und sglux GmbH<br \/>\nperiod: 2011<br \/>\nacknowledgements: BMWi ZIM 2194602RR9<\/p>\n<p><em>Abstract <\/em><br \/>\nFor monitoring high UV irradiance, silicon carbide (SiC) based photodiodes are used. This project characterized novel SiC UV photodiodes in terms of their spectral and integral responsivity. Special attention was paid to the aging behavior of the photodiodes due to high UV irradiance. Artificial aging of the samples were performed by illumination with a high power medium pressure mercury discharge lamp. After burn in no degradation could be measured.<\/p>\n<p><em>Publications<\/em><br \/>\nS. Nowy\u00b9, B. Barton\u00b9, S. Pape\u00b9, P. Sperfeld\u00b9, D. Friedrich\u00b9, S. Winter\u00b9, G. Hopfenmueller\u00b2, T. Weiss\u00b2,<br \/>\n\u00b9Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), 4.1 Photometry and Applied Radiometry, Braunschweig, Germany, \u00b2sglux GmbH, Berlin, Germany<\/p>\n<p>&#8220;Characterisation of SiC photodiodes for high irradiance UV radiometers&#8221;<br \/>\nProceedings of NEWRAD2011, edited by S. Park and E. Ikonen. (Aalto University, Espoo, Finland, 2011) p. 203.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Partner: Physikalisch-Technische Bundesanstalt in Braunschweig und Berlin (PTB) und sglux GmbH<br \/>\nperiod: 2011<br \/>\nacknowledgements: BMWi ZIM 2194602RR9<\/p>\n<p><em>Abstract <\/em><br \/>\nFor monitoring high UV irradiance, silicon carbide (SiC) based photodiodes are used. This project characterized novel SiC UV photodiodes in terms of their spectral and integral responsivity. Special attention was paid to the aging behavior of the photodiodes due to high UV irradiance. Artificial aging of the samples were performed by illumination with a high power medium pressure mercury discharge lamp. After burn in no degradation could be measured.<\/p>\n<p><em>Publications<\/em><br \/>\nS. Nowy\u00b9, B. Barton\u00b9, S. Pape\u00b9, P. Sperfeld\u00b9, D. Friedrich\u00b9, S. Winter\u00b9, G. Hopfenmueller\u00b2, T. Weiss\u00b2,<br \/>\n\u00b9Physikalisch-Technische Bundesanstalt Braunschweig und Berlin (PTB), 4.1 Photometry and Applied Radiometry, Braunschweig, Germany, \u00b2sglux GmbH, Berlin, Germany<\/p>\n<p>&#8220;Characterisation of SiC photodiodes for high irradiance UV radiometers&#8221;<br \/>\nProceedings of NEWRAD2011, edited by S. Park and E. Ikonen. (Aalto University, Espoo, Finland, 2011) p. 203.<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"_genesis_hide_title":false,"_genesis_hide_breadcrumbs":false,"_genesis_hide_singular_image":false,"_genesis_hide_footer_widgets":false,"_genesis_custom_body_class":"","_genesis_custom_post_class":"","_genesis_layout":"","footnotes":""},"categories":[307,51],"tags":[],"class_list":{"0":"post-10292","1":"post","2":"type-post","3":"status-publish","4":"format-standard","6":"category-completed_scientific_research_projects-en","7":"category-research","8":"entry"},"acf":[],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v26.6 - https:\/\/yoast.com\/wordpress\/plugins\/seo\/ -->\n<title>2011 - Characterisation of SiC photodiodes for high irradiance UV radiometers | sglux<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/sglux.de\/en\/2011-characterisation-of-sic-photodiodes-for-high-irradiance-uv-radiometers-2\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"2011 - Characterisation of SiC photodiodes for high irradiance UV radiometers | sglux\" \/>\n<meta property=\"og:description\" content=\"Partner: Physikalisch-Technische Bundesanstalt in Braunschweig und Berlin (PTB) und sglux GmbH period: 2011 acknowledgements: BMWi ZIM 2194602RR9  Abstract  For monitoring high UV irradiance, silicon carbide (SiC) based photodiodes are used. 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