Silicon Carbide UV Photodiodes from sglux
SiC Photodiodes with up to 36mm² active area
Since 2009 sglux produces SiC based UV photodiode chips with active areas from 0.06 mm² to 36 mm², SiC quadrant photodiodes and SiC spectrometer modules.
SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for semiconductor UV detectors. The UV photodiodes from sglux can be permanently operated at up to 170°C. The temperature coefficient is also low, <0,1%/K. Because of the low dark current (fA range), very low UV radiation intensities can be measured reliably. SiC photodiodes are available as broadband devices or with optical filters providing UV-A, UV-B, or UV-C-only sensitivity, erythemal action curve or ICNIRP compliance. Each sensor can be ordered as a TOCON with integrated amplifier.
Characterisation in cooperation with German PTB
The sglux R&D team has more than 20 years of experience in producing UV sensitive semiconductor chips. This skill powered the SiC R&D work focussing extreme radiation hardness. In 2010 the German PTB analyzed that the radiation hardness of the sglux SiC UV chips could be improved by factor two compared the UV sensing chips produced by Cree, Inc. until 2007.
Furthermore the visible blindness of the sglux chips could be improved by five orders of magnitude compared with Cree SiC chips now totalling to more than ten orders of magnitude of visible blindness.
R&D and production in Berlin-Adlershof
The R&D work was done in cooperation with the Ferdinand-Braun-Institut Leibniz-Institut fuer Hoechstfrequenztechnik (Process Development), the Leibniz-Institut fuer Kristallzuechtung (Epitaxy) and Cree, Inc. The machines of the two research institutes are used for the production of the SiC chips.